The effects of proton-defect interactions on radiation-induced interface-trap formation and annealing

D. R. Hughart; R. D. Schrimpf; D. M. Fleetwood; N. L. Rowsey; M. E. Law; B. R. Tuttle; S. T. Pantelides

doi:10.1109/TNS.2012.2220982

The effects of proton-defect interactions on radiation-induced interface-trap formation and annealing

D. R. Hughart
, R. D. Schrimpf
, D. M. Fleetwood
, N. L. Rowsey
, M. E. Law
, B. R. Tuttle
, S. T. Pantelides

School of Science (Behrend)

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

Interface-trap buildup and annealing are examined as a function of temperature, dose rate, and H₂ concentration using a physics-based model. The roles of a number of common oxide defects in radiation-induced interface-trap buildup are evaluated under various conditions. Defects near the interface play a significant role in determining interface-trap buildup by trapping protons as proton concentration and temperature increase.

Original language	English (US)
Article number	6359809
Pages (from-to)	3087-3092
Number of pages	6
Journal	IEEE Transactions on Nuclear Science
Volume	59
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2012.2220982
State	Published - 2012

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2012.2220982

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title = "The effects of proton-defect interactions on radiation-induced interface-trap formation and annealing",

abstract = "Interface-trap buildup and annealing are examined as a function of temperature, dose rate, and H2 concentration using a physics-based model. The roles of a number of common oxide defects in radiation-induced interface-trap buildup are evaluated under various conditions. Defects near the interface play a significant role in determining interface-trap buildup by trapping protons as proton concentration and temperature increase.",

author = "Hughart, \{D. R.\} and Schrimpf, \{R. D.\} and Fleetwood, \{D. M.\} and Rowsey, \{N. L.\} and Law, \{M. E.\} and Tuttle, \{B. R.\} and Pantelides, \{S. T.\}",

note = "Funding Information: Manuscript received July 13, 2012; revised September 04, 2012; accepted September 21, 2012. Date of publication November 21, 2012; date of current version December 11, 2012. This work was supported by the AFOSR, the US Navy, the U.S. Air Force HiREV Program, and the Defense Threat Reduction Agency.",

year = "2012",

doi = "10.1109/TNS.2012.2220982",

language = "English (US)",

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AU - Hughart, D. R.

AU - Schrimpf, R. D.

AU - Fleetwood, D. M.

AU - Rowsey, N. L.

AU - Law, M. E.

AU - Tuttle, B. R.

AU - Pantelides, S. T.

N1 - Funding Information: Manuscript received July 13, 2012; revised September 04, 2012; accepted September 21, 2012. Date of publication November 21, 2012; date of current version December 11, 2012. This work was supported by the AFOSR, the US Navy, the U.S. Air Force HiREV Program, and the Defense Threat Reduction Agency.

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Y1 - 2012

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AB - Interface-trap buildup and annealing are examined as a function of temperature, dose rate, and H2 concentration using a physics-based model. The roles of a number of common oxide defects in radiation-induced interface-trap buildup are evaluated under various conditions. Defects near the interface play a significant role in determining interface-trap buildup by trapping protons as proton concentration and temperature increase.

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The effects of proton-defect interactions on radiation-induced interface-trap formation and annealing

Abstract

All Science Journal Classification (ASJC) codes

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