The effects of SiO₂ barrier between active layer and substrate on the performance and reliability of polycrystalline silicon thin film transistors

Engineering & Materials Science

• Thin film transistors 100%
• Polysilicon 90%
• Glass 62%
• Hot carriers 58%
• Substrates 55%
• Coatings 26%
• Grain boundaries 17%
• Impurities 16%
• Vapors 15%
• Diffusion barriers 12%
• Atmospheric pressure 9%
• Compressive stress 9%
• Tensile stress 8%
• Thin films 8%

Physics & Astronomy

• transistors 62%
• glass 45%
• silicon 42%
• thin films 40%
• performance 34%
• coatings 23%
• traps 19%
• grain boundaries 12%
• impurities 11%
• barrier layers 9%
• tensile stress 8%
• vapor pressure 8%
• atmospheric pressure 7%
• low pressure 7%
• vapors 6%

Chemical Compounds

• Polycrystalline Solid 69%
• Glass 53%
• Glass Substrate 38%
• Coating Agent 31%
• Grain Boundary 27%
• Diffusion Barrier 16%
• Pressure 7%