The effects of substrates on the characteristics of polycrystalline silicon thin film transistors

Engineering & Materials Science

• Thin film transistors 100%
• Polysilicon 90%
• Hot carriers 58%
• Substrates 55%
• Fused silica 36%
• Glass 20%
• Impurities 16%
• Low pressure chemical vapor deposition 14%
• Silicon oxides 12%
• Threshold voltage 9%
• Leakage currents 9%
• Oxides 7%
• Silicon 6%
• Geometry 5%

Physics & Astronomy

• transistors 62%
• silicon 42%
• thin films 40%
• silicon dioxide 13%
• traps 12%
• impurities 11%
• glass 10%
• silica glass 9%
• silicon films 9%
• silicon oxides 9%
• threshold voltage 8%
• low pressure 7%
• leakage 7%
• vapor deposition 6%
• oxides 5%
• geometry 4%
• performance 3%

Chemical Compounds

• Polycrystalline Solid 69%
• Glass 40%
• Liquid Film 37%
• Low Pressure Chemical Vapour Deposition 28%
• Leakage Current 25%
• Voltage 14%
• Length 11%
• Application 6%