TY - JOUR
T1 - The growth and modification of materials via ion-surface processing
AU - Hanley, Luke
AU - Sinnott, Susan B.
N1 - Funding Information:
The authors would like to thank the many people who contributed in various ways to the production of this article. Dennis Jacobs and his students at the University of Notre Dame provided Fig. 1 . Michael Moseler of the Georgia Institute of Technology and Hellmut Haberland of the Freiburg Materials Research Center provided Fig. 4 . Roger Smith of Loughborough University and Roger Webb of University of Surrey provided Fig. 7 . Steve Ruatta of Photronics provided Fig. 8 . Gerry Zajac of BP Amoco provided scientific assistance and access to the atomic force microscope used to collect the data for Fig. 9 . Wayne Rabalais of the University of Houston and Yip-Wah Chung of Northwestern University provided reprints, preprints, and instructive information on isotopically pure and carbon nitride films, respectively. LH's graduate students Muthu Wijesundara and Erick Fuoco of the University of Illinois at Chicago collected the data in Figs. 5 and 9 . SBS's students and postdoctoral research associates Yuan Ji, and Boris Ni ran the molecular dynamics simulations presented in Fig. 6 . Finally, the National Science Foundation and the Petroleum Research Fund provided funding for the authors' research efforts in ion–surface collisions (LH: NSF CHE-9986226; SBS: NSF CHE-9708049).
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2002/3/10
Y1 - 2002/3/10
N2 - A wide variety of gas phase ions with kinetic energies from 1-107 eV increasingly are being used for the growth and modification of state-of-the-art material interfaces. Ions can be used to deposit thin films; expose fresh interfaces by sputtering; grow mixed interface layers from ions, ambient neutrals, and/or surface atoms; modify the phases of interfaces; dope trace elements into interface regions; impart specific chemical functionalities to a surface; toughen materials; and create micron- and nanometer-scale interface structures. Several examples are developed which demonstrate the variety of technologically important interface modification that is possible with gas phase ions. These examples have been selected to demonstrate how the choice of the ion and its kinetic energy controls modification and deposition for several different materials. Examples are drawn from experiments, computer simulations, fundamental research, and active technological applications. Finally, a list of research areas is provided for which ion-surface modification promises considerable scientific and technological advances in the new millennium.
AB - A wide variety of gas phase ions with kinetic energies from 1-107 eV increasingly are being used for the growth and modification of state-of-the-art material interfaces. Ions can be used to deposit thin films; expose fresh interfaces by sputtering; grow mixed interface layers from ions, ambient neutrals, and/or surface atoms; modify the phases of interfaces; dope trace elements into interface regions; impart specific chemical functionalities to a surface; toughen materials; and create micron- and nanometer-scale interface structures. Several examples are developed which demonstrate the variety of technologically important interface modification that is possible with gas phase ions. These examples have been selected to demonstrate how the choice of the ion and its kinetic energy controls modification and deposition for several different materials. Examples are drawn from experiments, computer simulations, fundamental research, and active technological applications. Finally, a list of research areas is provided for which ion-surface modification promises considerable scientific and technological advances in the new millennium.
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U2 - 10.1016/S0039-6028(01)01528-X
DO - 10.1016/S0039-6028(01)01528-X
M3 - Article
AN - SCOPUS:0037050999
SN - 0039-6028
VL - 500
SP - 500
EP - 522
JO - Surface Science
JF - Surface Science
IS - 1-3
ER -