Abstract
The creep properties of silicon nitride containing 6 wt % yttria and 2 wt% alumina have been determined in the temperature range 1573 to 1673 K. The stress exponent, n, in the equation {Mathematical expression} ∝ σn was determined to be 2.00±0.15 and the true activation energy was found to be 692±25 kJ mol-1. Transmission electron microscopy studies showed that deformation occurred in the grain boundary glassy phase accompanied by microcrack formation and cavitation. The steady state creep results are consistent with a diffusion controlled creep mechanism involving nitrogen diffusion through the grain boundary glassy phase.
Original language | English (US) |
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Pages (from-to) | 4443-4452 |
Number of pages | 10 |
Journal | Journal of Materials Science |
Volume | 24 |
Issue number | 12 |
DOIs | |
State | Published - Dec 1989 |
All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Ceramics and Composites
- Mechanical Engineering
- Polymers and Plastics
- General Materials Science
- Materials Science (miscellaneous)