The influence of buffer layer coalescence on stress evolution in GaN grown on ion implanted AlN/Si(111) substrates

Engineering & Materials Science

• Buffer layers 100%
• Coalescence 81%
• Epilayers 71%
• Ions 64%
• Substrates 49%
• Metallorganic chemical vapor deposition 22%
• Ion implantation 19%
• Stress measurement 17%
• Crystalline materials 14%
• Compressive stress 14%
• Tensile stress 14%

Chemical Compounds

• Implanted Ion 99%
• Coalescence 76%
• Buffer Solution 45%
• Threading Dislocation 43%
• Liquid Film 33%
• Ion Implantation 28%
• Grain Size 21%
• Chemical Vapour Deposition 21%
• Strain 16%
• Flow 15%

Physics & Astronomy

• coalescing 67%
• buffers 59%
• ions 32%
• stress measurement 16%
• tensile stress 14%
• decoupling 14%
• inclination 13%
• metalorganic chemical vapor deposition 13%
• ion implantation 12%
• implantation 12%
• grain size 10%
• gradients 9%