The influence of low-energy argon implantation on gallium arsenide Schottky barriers

Y. G. Wang; S. Ashok

doi:10.1063/1.342801

The influence of low-energy argon implantation on gallium arsenide Schottky barriers

Y. G. Wang, S. Ashok

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The influence of ion bombardment damage on the properties of Au/GaAs Schottky barriers has been studied with 10-keV Ar implanted into both n-type and p-type GaAs over the dose range 10¹²-10¹ ⁵ cm^-2. Electrical characteristics determined over a wide temperature range (77-360 K) reveal a number of phenomena dictating barrier modification and carrier transport across the Au/GaAs interface: Change in Schottky barrier height due to defect levels introduced by ion damage, the very low threshold dose for barrier modification, increased series resistance, and creation of a shunt conducting path. Partial dynamic annealing of defects is also observed under high-temperature (≅200 °C) implantation.

Original language	English (US)
Pages (from-to)	2371-2375
Number of pages	5
Journal	Journal of Applied Physics
Volume	65
Issue number	6
DOIs	https://doi.org/10.1063/1.342801
State	Published - 1989

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.342801

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title = "The influence of low-energy argon implantation on gallium arsenide Schottky barriers",

abstract = "The influence of ion bombardment damage on the properties of Au/GaAs Schottky barriers has been studied with 10-keV Ar implanted into both n-type and p-type GaAs over the dose range 1012-101 5 cm-2. Electrical characteristics determined over a wide temperature range (77-360 K) reveal a number of phenomena dictating barrier modification and carrier transport across the Au/GaAs interface: Change in Schottky barrier height due to defect levels introduced by ion damage, the very low threshold dose for barrier modification, increased series resistance, and creation of a shunt conducting path. Partial dynamic annealing of defects is also observed under high-temperature (≅200 °C) implantation.",

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AU - Wang, Y. G.

AU - Ashok, S.

PY - 1989

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N2 - The influence of ion bombardment damage on the properties of Au/GaAs Schottky barriers has been studied with 10-keV Ar implanted into both n-type and p-type GaAs over the dose range 1012-101 5 cm-2. Electrical characteristics determined over a wide temperature range (77-360 K) reveal a number of phenomena dictating barrier modification and carrier transport across the Au/GaAs interface: Change in Schottky barrier height due to defect levels introduced by ion damage, the very low threshold dose for barrier modification, increased series resistance, and creation of a shunt conducting path. Partial dynamic annealing of defects is also observed under high-temperature (≅200 °C) implantation.

AB - The influence of ion bombardment damage on the properties of Au/GaAs Schottky barriers has been studied with 10-keV Ar implanted into both n-type and p-type GaAs over the dose range 1012-101 5 cm-2. Electrical characteristics determined over a wide temperature range (77-360 K) reveal a number of phenomena dictating barrier modification and carrier transport across the Au/GaAs interface: Change in Schottky barrier height due to defect levels introduced by ion damage, the very low threshold dose for barrier modification, increased series resistance, and creation of a shunt conducting path. Partial dynamic annealing of defects is also observed under high-temperature (≅200 °C) implantation.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

The influence of low-energy argon implantation on gallium arsenide Schottky barriers

Abstract

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