The influence of the surface nanostucture with excellent anti-reflection properties to the crystal silicon solar cell's characteristics

The paper introduce a 12.68% silicon nanowire solar cell with excellent anti-reflectance ability synthesized on 125mm×125mm silicon substrate using wet chemical etch method. The fabrication process including Al-back surface field and metal grid formation are conventional industry technique except surface texture. The reflectance measurement was used to scale the reflectance ability of silicon nanowire, and the lowest reflectance of less than 3% is achieved in wavelengths 300-1000nm. The absorption of silicon nanowire is improved nearly 10% compared with pyramids textured surface. According to external quantum efficiency measurement, we analyzed the basic parameters of the solar cells made by us. Also we discuss the reason why the efficiency of silicon nanowire solar cell is lower than the pyramids textured solar cells. We conclude that proper passivation and metal contact fabrication technique is very important for nanostructure solar cells.