The nature of the deep hole trap in mos oxides

Howard S. Witham; Patrick M. Lenahan

doi:10.1109/TNS.1987.4337444

The nature of the deep hole trap in mos oxides

Howard S. Witham, Patrick M. Lenahan

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We have investigated hole and electron trapping events at E’ deep hole traps in metal-oxide-semiconductor oxides. Using a sequence of ultraviolet irradiations, electron spin resonance measurements, and capacitance versus voltage measurements, we have obtained results which are completely consistent with a simple oxygen vacancy model for the hole trap. However, our results are inconsistent with the bond strain gradient model proposed by Grunthaner et al.

Original language	English (US)
Pages (from-to)	1147-1151
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	34
Issue number	6
DOIs	https://doi.org/10.1109/TNS.1987.4337444
State	Published - Dec 1987

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.1987.4337444

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title = "The nature of the deep hole trap in mos oxides",

abstract = "We have investigated hole and electron trapping events at E{\textquoteright} deep hole traps in metal-oxide-semiconductor oxides. Using a sequence of ultraviolet irradiations, electron spin resonance measurements, and capacitance versus voltage measurements, we have obtained results which are completely consistent with a simple oxygen vacancy model for the hole trap. However, our results are inconsistent with the bond strain gradient model proposed by Grunthaner et al.",

author = "Witham, {Howard S.} and Lenahan, {Patrick M.}",

year = "1987",

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doi = "10.1109/TNS.1987.4337444",

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AU - Witham, Howard S.

AU - Lenahan, Patrick M.

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N2 - We have investigated hole and electron trapping events at E’ deep hole traps in metal-oxide-semiconductor oxides. Using a sequence of ultraviolet irradiations, electron spin resonance measurements, and capacitance versus voltage measurements, we have obtained results which are completely consistent with a simple oxygen vacancy model for the hole trap. However, our results are inconsistent with the bond strain gradient model proposed by Grunthaner et al.

AB - We have investigated hole and electron trapping events at E’ deep hole traps in metal-oxide-semiconductor oxides. Using a sequence of ultraviolet irradiations, electron spin resonance measurements, and capacitance versus voltage measurements, we have obtained results which are completely consistent with a simple oxygen vacancy model for the hole trap. However, our results are inconsistent with the bond strain gradient model proposed by Grunthaner et al.

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JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

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ER -

The nature of the deep hole trap in mos oxides

Abstract

All Science Journal Classification (ASJC) codes

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