Abstract
This article provides a comprehensive review of recent advances in heterostructures of two-dimensional (2-D) layered materials for future electronic and optoelectronic applications. We also discuss the progress in capping heterostructures, where an inert 2-D material serves as a passivation layer and provides environmental stability to the relatively unstable 2-D material. Such capping of heterostructures often enhances the electronic properties (e.g., the carrier mobility) of the active 2-D layer by orders of magnitude. Finally, we elucidate the progress in large-area growth of these heterostructures using various state-of-the-art techniques.
Original language | English (US) |
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Article number | 7891558 |
Pages (from-to) | 6-17 |
Number of pages | 12 |
Journal | IEEE Nanotechnology Magazine |
Volume | 11 |
Issue number | 2 |
DOIs | |
State | Published - Jun 2017 |
All Science Journal Classification (ASJC) codes
- Mechanical Engineering
- Electrical and Electronic Engineering