Abstract
This article provides a comprehensive review of recent advances in heterostructures of two-dimensional (2-D) layered materials for future electronic and optoelectronic applications. We also discuss the progress in capping heterostructures, where an inert 2-D material serves as a passivation layer and provides environmental stability to the relatively unstable 2-D material. Such capping of heterostructures often enhances the electronic properties (e.g., the carrier mobility) of the active 2-D layer by orders of magnitude. Finally, we elucidate the progress in large-area growth of these heterostructures using various state-of-the-art techniques.
| Original language | English (US) |
|---|---|
| Article number | 7891558 |
| Pages (from-to) | 6-17 |
| Number of pages | 12 |
| Journal | IEEE Nanotechnology Magazine |
| Volume | 11 |
| Issue number | 2 |
| DOIs | |
| State | Published - Jun 2017 |
All Science Journal Classification (ASJC) codes
- Mechanical Engineering
- Electrical and Electronic Engineering