TY - JOUR
T1 - The role of boron nitride in graphite plasma arcs
AU - Terrones, M.
AU - Hsu, W. K.
AU - Ramos, S.
AU - Castillo, R.
AU - Terrones, H.
PY - 1998
Y1 - 1998
N2 - Novel graphitic nanostructures (e.g. nanotubes, graphitic onions, polyhedral particles, hemitoroidal nanotube caps and branched nanotubes) are produced by arcing graphite electrodes, containing hexagonal-BN, in inert atmospheres. The introduction of BN or B inside the graphite anode generates long (≤ 20μm) and well graphitised carbon nanotubes exhibiting boron at their tips. High Resolution Electron Microscopy (HRTEM), Scaning Electron Microscopy (SEM), Electron Energy Loss Spectroscopy (EELS) and X-ray powder diffraction studies reveal the production of B4C crsytals, in addition to little amounts of BC3 nanotubes. Mass spectrometry (MS) studies over the generated soots indicate high yields of large fullerenes (e.g. C70, C76, and C84) and thermo-Gravimetric analysis (TGA) of the nanostructures show high oxidation resistance.
AB - Novel graphitic nanostructures (e.g. nanotubes, graphitic onions, polyhedral particles, hemitoroidal nanotube caps and branched nanotubes) are produced by arcing graphite electrodes, containing hexagonal-BN, in inert atmospheres. The introduction of BN or B inside the graphite anode generates long (≤ 20μm) and well graphitised carbon nanotubes exhibiting boron at their tips. High Resolution Electron Microscopy (HRTEM), Scaning Electron Microscopy (SEM), Electron Energy Loss Spectroscopy (EELS) and X-ray powder diffraction studies reveal the production of B4C crsytals, in addition to little amounts of BC3 nanotubes. Mass spectrometry (MS) studies over the generated soots indicate high yields of large fullerenes (e.g. C70, C76, and C84) and thermo-Gravimetric analysis (TGA) of the nanostructures show high oxidation resistance.
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U2 - 10.1080/10641229809350240
DO - 10.1080/10641229809350240
M3 - Article
AN - SCOPUS:0032157115
SN - 1064-122X
VL - 6
SP - 787
EP - 800
JO - Fullerene Science and Technology
JF - Fullerene Science and Technology
IS - 5
ER -