@article{2adc92349149467db70b2138945894c3,
title = "The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN",
abstract = "In this paper, facet formation of (0001) \{ 11 2 ¯ 0 \} \{ 11 2 ¯ 2 \} facets during epitaxial lateral overgrowth (ELO) of GaN is investigated for different Ga vapor supersaturations.",
author = "Ke Wang and Ronny Kirste and Seiji Mita and Shun Washiyama and Will Mecouch and Pramod Reddy and Ram{\'o}n Collazo and Zlatko Sitar",
note = "Publisher Copyright: {\textcopyright} direction of GaN. Scanning electron microscopy was used to characterize the cross section shapes of the ELO GaN islands. A correlation of supersaturation, facet formation, and the shape of the ELO GaN islands is found. It is shown that \{ 11 2 ¯ 2 \} facets are favored under high Ga vapor supersaturation, while \{ 11 2 ¯ 0 \} facets are favored under low Ga vapor supersaturation. A qualitative model based on Wulff construction and density functional theory calculation is proposed to illustrate the mechanism of the facet formation of the ELO GaN islands. ",
year = "2022",
month = jan,
day = "17",
doi = "10.1063/5.0077628",
language = "English (US)",
volume = "120",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "3",
}