The Role of Group‐V Impurities in Defect Formation in Irradiated Silicon

O. O. Awadelkarim; A. Henry; B. Monemar; J. L. Lindström

doi:10.1002/pssa.2211200227

The Role of Group‐V Impurities in Defect Formation in Irradiated Silicon

O. O. Awadelkarim, A. Henry, B. Monemar, J. L. Lindström

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Abstract

Direct experimental evidence is provided on the involvement of phosphorus in the structure of the defect that is associated with a prominent electron trap at E_c −0.42eV (E_c is the conduction band edge) in irradiated n‐type silicon. Possible vacancy participation in the formation of the same defect is inferred from the defect production in float‐zone und Czochralski‐grown material. However, it may not be concluded from this study whether a single phosphorus atom and a single vacancy (i.e. the E‐centre) are the only defect constituents. Similar conclusions are also arrived at for an electron trap observed at E_c −0.30eV. These two traps are metastable, a property observed here only in phosphorus‐related defects. Electron traps at E_c −0.34 eV and E_c −0.51 eV are associated with defects containing arsenic and antimony, respectively.

Original language	English (US)
Pages (from-to)	539-546
Number of pages	8
Journal	physica status solidi (a)
Volume	120
Issue number	2
DOIs	https://doi.org/10.1002/pssa.2211200227
State	Published - Aug 16 1990

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "The Role of Group‐V Impurities in Defect Formation in Irradiated Silicon",

abstract = "Direct experimental evidence is provided on the involvement of phosphorus in the structure of the defect that is associated with a prominent electron trap at Ec −0.42eV (Ec is the conduction band edge) in irradiated n‐type silicon. Possible vacancy participation in the formation of the same defect is inferred from the defect production in float‐zone und Czochralski‐grown material. However, it may not be concluded from this study whether a single phosphorus atom and a single vacancy (i.e. the E‐centre) are the only defect constituents. Similar conclusions are also arrived at for an electron trap observed at Ec −0.30eV. These two traps are metastable, a property observed here only in phosphorus‐related defects. Electron traps at Ec −0.34 eV and Ec −0.51 eV are associated with defects containing arsenic and antimony, respectively.",

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AU - Awadelkarim, O. O.

AU - Henry, A.

AU - Monemar, B.

AU - Lindström, J. L.

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N2 - Direct experimental evidence is provided on the involvement of phosphorus in the structure of the defect that is associated with a prominent electron trap at Ec −0.42eV (Ec is the conduction band edge) in irradiated n‐type silicon. Possible vacancy participation in the formation of the same defect is inferred from the defect production in float‐zone und Czochralski‐grown material. However, it may not be concluded from this study whether a single phosphorus atom and a single vacancy (i.e. the E‐centre) are the only defect constituents. Similar conclusions are also arrived at for an electron trap observed at Ec −0.30eV. These two traps are metastable, a property observed here only in phosphorus‐related defects. Electron traps at Ec −0.34 eV and Ec −0.51 eV are associated with defects containing arsenic and antimony, respectively.

AB - Direct experimental evidence is provided on the involvement of phosphorus in the structure of the defect that is associated with a prominent electron trap at Ec −0.42eV (Ec is the conduction band edge) in irradiated n‐type silicon. Possible vacancy participation in the formation of the same defect is inferred from the defect production in float‐zone und Czochralski‐grown material. However, it may not be concluded from this study whether a single phosphorus atom and a single vacancy (i.e. the E‐centre) are the only defect constituents. Similar conclusions are also arrived at for an electron trap observed at Ec −0.30eV. These two traps are metastable, a property observed here only in phosphorus‐related defects. Electron traps at Ec −0.34 eV and Ec −0.51 eV are associated with defects containing arsenic and antimony, respectively.

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The Role of Group‐V Impurities in Defect Formation in Irradiated Silicon

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