The role of the tunneling component in the current-voltage characteristics of metal-GaN Schottky diodes

L. S. Yu; Q. Z. Liu; Q. J. Xing; D. J. Qiao; S. S. Lau; J. Redwing

doi:10.1063/1.368270

The role of the tunneling component in the current-voltage characteristics of metal-GaN Schottky diodes

L. S. Yu, Q. Z. Liu, Q. J. Xing, D. J. Qiao, S. S. Lau, J. Redwing

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Abstract

The temperature dependence of the current-voltage characteristics of Ni-GaN Schottky barriers have been measured and analyzed. It was found that the enhanced tunneling component in the transport current of metal-GaN Schottky barrier contacts is a likely explanation for the large scatter in the measured Richardson constant.

Original language	English (US)
Pages (from-to)	2099-2104
Number of pages	6
Journal	Journal of Applied Physics
Volume	84
Issue number	4
DOIs	https://doi.org/10.1063/1.368270
State	Published - Aug 15 1998

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.368270

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title = "The role of the tunneling component in the current-voltage characteristics of metal-GaN Schottky diodes",

abstract = "The temperature dependence of the current-voltage characteristics of Ni-GaN Schottky barriers have been measured and analyzed. It was found that the enhanced tunneling component in the transport current of metal-GaN Schottky barrier contacts is a likely explanation for the large scatter in the measured Richardson constant.",

author = "Yu, {L. S.} and Liu, {Q. Z.} and Xing, {Q. J.} and Qiao, {D. J.} and Lau, {S. S.} and J. Redwing",

year = "1998",

month = aug,

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language = "English (US)",

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journal = "Journal of Applied Physics",

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AU - Yu, L. S.

AU - Liu, Q. Z.

AU - Xing, Q. J.

AU - Qiao, D. J.

AU - Lau, S. S.

AU - Redwing, J.

PY - 1998/8/15

Y1 - 1998/8/15

N2 - The temperature dependence of the current-voltage characteristics of Ni-GaN Schottky barriers have been measured and analyzed. It was found that the enhanced tunneling component in the transport current of metal-GaN Schottky barrier contacts is a likely explanation for the large scatter in the measured Richardson constant.

AB - The temperature dependence of the current-voltage characteristics of Ni-GaN Schottky barriers have been measured and analyzed. It was found that the enhanced tunneling component in the transport current of metal-GaN Schottky barrier contacts is a likely explanation for the large scatter in the measured Richardson constant.

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JO - Journal of Applied Physics

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The role of the tunneling component in the current-voltage characteristics of metal-GaN Schottky diodes

Abstract

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