The role of the tunneling component in the current-voltage characteristics of metal-GaN Schottky diodes

L. S. Yu; Q. Z. Liu; Q. J. Xing; D. J. Qiao; S. S. Lau; J. Redwing

doi:10.1063/1.368270

The role of the tunneling component in the current-voltage characteristics of metal-GaN Schottky diodes

L. S. Yu
, Q. Z. Liu
, Q. J. Xing
, D. J. Qiao
, S. S. Lau
, J. Redwing

Research output: Contribution to journal › Article › peer-review

183 Scopus citations

Abstract

The temperature dependence of the current-voltage characteristics of Ni-GaN Schottky barriers have been measured and analyzed. It was found that the enhanced tunneling component in the transport current of metal-GaN Schottky barrier contacts is a likely explanation for the large scatter in the measured Richardson constant.

Original language	English (US)
Pages (from-to)	2099-2104
Number of pages	6
Journal	Journal of Applied Physics
Volume	84
Issue number	4
DOIs	https://doi.org/10.1063/1.368270
State	Published - Aug 15 1998

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.368270

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title = "The role of the tunneling component in the current-voltage characteristics of metal-GaN Schottky diodes",

abstract = "The temperature dependence of the current-voltage characteristics of Ni-GaN Schottky barriers have been measured and analyzed. It was found that the enhanced tunneling component in the transport current of metal-GaN Schottky barrier contacts is a likely explanation for the large scatter in the measured Richardson constant.",

author = "Yu, \{L. S.\} and Liu, \{Q. Z.\} and Xing, \{Q. J.\} and Qiao, \{D. J.\} and Lau, \{S. S.\} and J. Redwing",

year = "1998",

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doi = "10.1063/1.368270",

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publisher = "American Institute of Physics",

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AU - Yu, L. S.

AU - Liu, Q. Z.

AU - Xing, Q. J.

AU - Qiao, D. J.

AU - Lau, S. S.

AU - Redwing, J.

PY - 1998/8/15

Y1 - 1998/8/15

N2 - The temperature dependence of the current-voltage characteristics of Ni-GaN Schottky barriers have been measured and analyzed. It was found that the enhanced tunneling component in the transport current of metal-GaN Schottky barrier contacts is a likely explanation for the large scatter in the measured Richardson constant.

AB - The temperature dependence of the current-voltage characteristics of Ni-GaN Schottky barriers have been measured and analyzed. It was found that the enhanced tunneling component in the transport current of metal-GaN Schottky barrier contacts is a likely explanation for the large scatter in the measured Richardson constant.

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UR - https://www.scopus.com/pages/publications/0001049050#tab=citedBy

U2 - 10.1063/1.368270

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SN - 0021-8979

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

The role of the tunneling component in the current-voltage characteristics of metal-GaN Schottky diodes

Abstract

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