The shunt influence of Al-p+ emitter on Voc characteristics and its optimization for Interdigitated Back Contact solar cells

Wei Zhang; Chen Chen; Rui Jia; G. J.M. Janssen; Dai Sheng Zhang; Zhao Xing; P. C.P. Bronsveld; A. W. Weeber; Zhi Jin; Xin Yu Liu

doi:10.1109/PVSC.2013.6745025

The shunt influence of Al-p+ emitter on Voc characteristics and its optimization for Interdigitated Back Contact solar cells

Wei Zhang, Chen Chen, Rui Jia, G. J.M. Janssen, Dai Sheng Zhang, Zhao Xing, P. C.P. Bronsveld, A. W. Weeber, Zhi Jin, Xin Yu Liu

Materials Research Institute (MRI)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In the case of screen-printed aluminum alloyed p⁺ emitter (Al-p⁺) Interdigitated Back Contact (IBC) solar cells, the shunt path induced by non-uniformity and discontinuity of the Al-p⁺ emitter has been minimized by exact control of firing condition. PC2D simulation results show that reduction and elimination of shunt path on Al-p⁺ emitter can significantly enhance the photovoltaic properties especially the open-circuit voltage (V_oc). We use a multi-diode model to establish the relation between the Voc and the effective shunt resistance of the cell.

Original language	English (US)
Title of host publication	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2681-2684
Number of pages	4
ISBN (Print)	9781479932993
DOIs	https://doi.org/10.1109/PVSC.2013.6745025
State	Published - 2013
Event	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: Jun 16 2013 → Jun 21 2013

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/Territory	United States
City	Tampa, FL
Period	6/16/13 → 6/21/13

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC.2013.6745025

Cite this

Zhang, W., Chen, C., Jia, R., Janssen, G. J. M., Zhang, D. S., Xing, Z., Bronsveld, P. C. P., Weeber, A. W., Jin, Z., & Liu, X. Y. (2013). The shunt influence of Al-p+ emitter on Voc characteristics and its optimization for Interdigitated Back Contact solar cells. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 2681-2684). Article 6745025 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6745025

Zhang, Wei ; Chen, Chen ; Jia, Rui et al. / The shunt influence of Al-p+ emitter on Voc characteristics and its optimization for Interdigitated Back Contact solar cells. 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 2681-2684 (Conference Record of the IEEE Photovoltaic Specialists Conference).

@inproceedings{27cd5e611d37402d92e85f49026f3ba6,

title = "The shunt influence of Al-p+ emitter on Voc characteristics and its optimization for Interdigitated Back Contact solar cells",

abstract = "In the case of screen-printed aluminum alloyed p+ emitter (Al-p+) Interdigitated Back Contact (IBC) solar cells, the shunt path induced by non-uniformity and discontinuity of the Al-p+ emitter has been minimized by exact control of firing condition. PC2D simulation results show that reduction and elimination of shunt path on Al-p+ emitter can significantly enhance the photovoltaic properties especially the open-circuit voltage (Voc). We use a multi-diode model to establish the relation between the Voc and the effective shunt resistance of the cell.",

author = "Wei Zhang and Chen Chen and Rui Jia and Janssen, {G. J.M.} and Zhang, {Dai Sheng} and Zhao Xing and Bronsveld, {P. C.P.} and Weeber, {A. W.} and Zhi Jin and Liu, {Xin Yu}",

year = "2013",

doi = "10.1109/PVSC.2013.6745025",

language = "English (US)",

isbn = "9781479932993",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "2681--2684",

booktitle = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013",

address = "United States",

note = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013 ; Conference date: 16-06-2013 Through 21-06-2013",

}

Zhang, W, Chen, C, Jia, R, Janssen, GJM, Zhang, DS, Xing, Z, Bronsveld, PCP, Weeber, AW, Jin, Z & Liu, XY 2013, The shunt influence of Al-p+ emitter on Voc characteristics and its optimization for Interdigitated Back Contact solar cells. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6745025, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 2681-2684, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 6/16/13. https://doi.org/10.1109/PVSC.2013.6745025

The shunt influence of Al-p+ emitter on Voc characteristics and its optimization for Interdigitated Back Contact solar cells. / Zhang, Wei; Chen, Chen; Jia, Rui et al.
39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 2681-2684 6745025 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - The shunt influence of Al-p+ emitter on Voc characteristics and its optimization for Interdigitated Back Contact solar cells

AU - Zhang, Wei

AU - Chen, Chen

AU - Jia, Rui

AU - Janssen, G. J.M.

AU - Zhang, Dai Sheng

AU - Xing, Zhao

AU - Bronsveld, P. C.P.

AU - Weeber, A. W.

AU - Jin, Zhi

AU - Liu, Xin Yu

PY - 2013

Y1 - 2013

N2 - In the case of screen-printed aluminum alloyed p+ emitter (Al-p+) Interdigitated Back Contact (IBC) solar cells, the shunt path induced by non-uniformity and discontinuity of the Al-p+ emitter has been minimized by exact control of firing condition. PC2D simulation results show that reduction and elimination of shunt path on Al-p+ emitter can significantly enhance the photovoltaic properties especially the open-circuit voltage (Voc). We use a multi-diode model to establish the relation between the Voc and the effective shunt resistance of the cell.

AB - In the case of screen-printed aluminum alloyed p+ emitter (Al-p+) Interdigitated Back Contact (IBC) solar cells, the shunt path induced by non-uniformity and discontinuity of the Al-p+ emitter has been minimized by exact control of firing condition. PC2D simulation results show that reduction and elimination of shunt path on Al-p+ emitter can significantly enhance the photovoltaic properties especially the open-circuit voltage (Voc). We use a multi-diode model to establish the relation between the Voc and the effective shunt resistance of the cell.

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T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 2681

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BT - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

Zhang W, Chen C, Jia R, Janssen GJM, Zhang DS, Xing Z et al. The shunt influence of Al-p+ emitter on Voc characteristics and its optimization for Interdigitated Back Contact solar cells. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 2681-2684. 6745025. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2013.6745025

The shunt influence of Al-p+ emitter on Voc characteristics and its optimization for Interdigitated Back Contact solar cells

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