TY - GEN
T1 - The synthesization of Si nanocrystals embedded in HfO2 matrix by electron beam co-evaporation technique
AU - Li, Weilong
AU - Jia, Rui
AU - Chen, Chen
AU - Liu, Ming
AU - Li, Haofeng
AU - Zhu, Chenxin
AU - Long, Shibing
N1 - Funding Information:
This work was supported by CAMS Innovation Fund for Medical Sciences (CIFMS) ( 2016-I2M-1-001 ). The sponsor had no role in the design and conduct of the study; collection, management, analysis, and interpretation of the data; preparation, review, or approval of the manuscript; and decision to submit the manuscript for publication.
PY - 2009
Y1 - 2009
N2 - Silicon nanocrystals synthesized by electron beam co-evaporation (EBCE) of Si and HfO2 mixture are studied. HfO2 and Si powder are uniformly mixed together in certain proportion. The mixed Si & HfO 2 powder is evaporated by electron beam evaporation technique. Then the SRO thin films are annealed at different temperatures at 2 hours in N 2 ambient to synthesize Silicon nanocrystals. For the sample annealed at 1050°C at 2 hours, silicon nanocrystals with different size between 3 nm to 5 nm, the mean diameter of 4.0 nm, and the density of 3×10 12 cm-2 are evidently observed by high resolution transmission electron microscopy (HRTEM). Then the Raman scattering and photoluminescence spectra arising from Silicon nanocrystals are further confirmed the above result. In addition, the samples annealed at 900°C for 2 hours to 8 hours are carefully studied by Raman spectra. This way of preparing SRO thin films and Si NCs has unique advantage and is controllable and flexible.
AB - Silicon nanocrystals synthesized by electron beam co-evaporation (EBCE) of Si and HfO2 mixture are studied. HfO2 and Si powder are uniformly mixed together in certain proportion. The mixed Si & HfO 2 powder is evaporated by electron beam evaporation technique. Then the SRO thin films are annealed at different temperatures at 2 hours in N 2 ambient to synthesize Silicon nanocrystals. For the sample annealed at 1050°C at 2 hours, silicon nanocrystals with different size between 3 nm to 5 nm, the mean diameter of 4.0 nm, and the density of 3×10 12 cm-2 are evidently observed by high resolution transmission electron microscopy (HRTEM). Then the Raman scattering and photoluminescence spectra arising from Silicon nanocrystals are further confirmed the above result. In addition, the samples annealed at 900°C for 2 hours to 8 hours are carefully studied by Raman spectra. This way of preparing SRO thin films and Si NCs has unique advantage and is controllable and flexible.
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U2 - 10.1149/1.3096574
DO - 10.1149/1.3096574
M3 - Conference contribution
AN - SCOPUS:77950673862
SN - 9781615676460
T3 - ECS Transactions
SP - 1071
EP - 1074
BT - ECS Transactions - ISTC/CSTIC 2009 (CISTC)
T2 - ISTC/CSTIC 2009 (CISTC)
Y2 - 19 March 2009 through 20 March 2009
ER -