TY - JOUR
T1 - Theoretical and Experimental Insight into the Mechanism for Spontaneous Vertical Growth of ReS2 Nanosheets
AU - Ghoshal, Debjit
AU - Yoshimura, Anthony
AU - Gupta, Tushar
AU - House, Andrew
AU - Basu, Swastik
AU - Chen, Yanwen
AU - Wang, Tianmeng
AU - Yang, Yang
AU - Shou, Wenjia
AU - Hachtel, Jordan A.
AU - Idrobo, Juan Carlos
AU - Lu, Toh Ming
AU - Basuray, Sagnik
AU - Meunier, Vincent
AU - Shi, Su Fei
AU - Koratkar, Nikhil
N1 - Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2018/7/25
Y1 - 2018/7/25
N2 - Rhenium disulfide (ReS2) differs fundamentally from other group-VI transition metal dichalcogenides (TMDs) due to its low structural symmetry, which results in its optical and electrical anisotropy. Although vertical growth is observed in some TMDs under special growth conditions, vertical growth in ReS2 is very different in that it is highly spontaneous and substrate-independent. In this study, the mechanism that underpins the thermodynamically favorable vertical growth mode of ReS2 is uncovered. It is found that the governing mechanism for ReS2 growth involves two distinct stages. In the first stage, ReS2 grows parallel to the growth substrate, consistent with conventional TMD growth. However, subsequent vertical growth is nucleated at points on the lattice where Re atoms are “pinched” together. At such sites, an additional Re atom binds with the cluster of pinched Re atoms, leaving an under-coordinated S atom protruding out of the ReS2 plane. This under-coordinated S is “reactive” and binds to free Re and S atoms, initiating growth in a direction perpendicular to the ReS2 surface. The utility of such vertical ReS2 arrays in applications where high surface-to-volume ratio and electric-field enhancement are essential, such as surface enhanced Raman spectroscopy, field emission, and solar-based disinfection of bacteria, is demonstrated.
AB - Rhenium disulfide (ReS2) differs fundamentally from other group-VI transition metal dichalcogenides (TMDs) due to its low structural symmetry, which results in its optical and electrical anisotropy. Although vertical growth is observed in some TMDs under special growth conditions, vertical growth in ReS2 is very different in that it is highly spontaneous and substrate-independent. In this study, the mechanism that underpins the thermodynamically favorable vertical growth mode of ReS2 is uncovered. It is found that the governing mechanism for ReS2 growth involves two distinct stages. In the first stage, ReS2 grows parallel to the growth substrate, consistent with conventional TMD growth. However, subsequent vertical growth is nucleated at points on the lattice where Re atoms are “pinched” together. At such sites, an additional Re atom binds with the cluster of pinched Re atoms, leaving an under-coordinated S atom protruding out of the ReS2 plane. This under-coordinated S is “reactive” and binds to free Re and S atoms, initiating growth in a direction perpendicular to the ReS2 surface. The utility of such vertical ReS2 arrays in applications where high surface-to-volume ratio and electric-field enhancement are essential, such as surface enhanced Raman spectroscopy, field emission, and solar-based disinfection of bacteria, is demonstrated.
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U2 - 10.1002/adfm.201801286
DO - 10.1002/adfm.201801286
M3 - Article
AN - SCOPUS:85047658364
SN - 1616-301X
VL - 28
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 30
M1 - 1801286
ER -