TY - GEN
T1 - Theoretical studies on the electronic structures and spectral properties of two iridium(III) complexes with tetraphenylimidodiphosphinate ligand
AU - Han, De Ming
AU - Zhang, Gang
AU - Zhao, Li Hui
PY - 2013
Y1 - 2013
N2 - The geometrical structures, electronic structures, and spectral properties of two Ir(III) complexes with tetraphenylimidodiphosphinate ligand were investigated theoretically. The ground and the lowest lying triplet excited states were fully optimized at the B3LYP/LANL2DZ. TDDFT/PCM calculations have been employed to predict the absorption and emission spectra starting from the ground and excited state geometries, respectively. The lowest lying absorptions were calculated to be at 436 and 405 nm for the two Ir(III) complexes, respectively, and they have the transition configuration of HOMO → LUMO. The lowest lying transitions can be assigned as metal/ligand-to-ligand charge transfer (MLCT/LLCT) character for the two Ir(III) complexes. Ionization potentials (IP) and electron affinities (EA) were calculated to evaluate the injection abilities of holes and electrons. The theoretical results can be expected to provide valuable information to design new OLED materials.
AB - The geometrical structures, electronic structures, and spectral properties of two Ir(III) complexes with tetraphenylimidodiphosphinate ligand were investigated theoretically. The ground and the lowest lying triplet excited states were fully optimized at the B3LYP/LANL2DZ. TDDFT/PCM calculations have been employed to predict the absorption and emission spectra starting from the ground and excited state geometries, respectively. The lowest lying absorptions were calculated to be at 436 and 405 nm for the two Ir(III) complexes, respectively, and they have the transition configuration of HOMO → LUMO. The lowest lying transitions can be assigned as metal/ligand-to-ligand charge transfer (MLCT/LLCT) character for the two Ir(III) complexes. Ionization potentials (IP) and electron affinities (EA) were calculated to evaluate the injection abilities of holes and electrons. The theoretical results can be expected to provide valuable information to design new OLED materials.
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U2 - 10.4028/www.scientific.net/AMR.660.35
DO - 10.4028/www.scientific.net/AMR.660.35
M3 - Conference contribution
AN - SCOPUS:84874632077
SN - 9783037856413
T3 - Advanced Materials Research
SP - 35
EP - 39
BT - Future Optical Materials and Circuit Design
T2 - 2012 International Conference on Future Optical Materials and Circuit Design, FOMCD 2012
Y2 - 27 December 2012 through 28 December 2012
ER -