TY - JOUR
T1 - Theory of channel hot-carrier degradation in MOSFETs
AU - Hess, K.
AU - Register, L. F.
AU - McMahon, W.
AU - Tuttle, B.
AU - Aktas, O.
AU - Ravaioli, U.
AU - Lyding, J. W.
AU - Kizilyalli, I. C.
N1 - Funding Information:
We would like to thank Prof. Elyse Rosenbaum and Mr. Erhong Li for many helpful discussions. This work was supported by the US Army Research Office under Con. No. DAAG55-98-1-0306, and the US Office of Naval Research under Con. No. N00014-98-1-0604.
PY - 1999/12/1
Y1 - 1999/12/1
N2 - A critical but still poorly understood process in metal-oxide-semiconductor field-effect transistors (MOSFETs) is stress-induced changes in device threshold voltage, channel conductance, etc. which limit the operating lifetimes of the transistors. However, the degradation characteristics of deep-submicron MOSFETs, the widely demonstrated deuterium/hydrogen isotope effect, and the related results of scanning-tunneling microscopy-based depassivation experiments on silicon-vacuum interfaces are providing new insights into the degradation of MOSFETs via, at least, depassivation of the silicon-oxide interface. In this manuscript, we review the basic mechanisms of depassivation, suggest disorder-induced variations in the threshold energies for silicon-hydrogen/deuterium bond breaking as a possible explanation for observed sublinear time dependencies for degradation below t0.5, and show that excitation of the vibrational modes of the bonds could play a significant role in the continuing degradation of deep-submicron MOSFETs operated at low voltages.
AB - A critical but still poorly understood process in metal-oxide-semiconductor field-effect transistors (MOSFETs) is stress-induced changes in device threshold voltage, channel conductance, etc. which limit the operating lifetimes of the transistors. However, the degradation characteristics of deep-submicron MOSFETs, the widely demonstrated deuterium/hydrogen isotope effect, and the related results of scanning-tunneling microscopy-based depassivation experiments on silicon-vacuum interfaces are providing new insights into the degradation of MOSFETs via, at least, depassivation of the silicon-oxide interface. In this manuscript, we review the basic mechanisms of depassivation, suggest disorder-induced variations in the threshold energies for silicon-hydrogen/deuterium bond breaking as a possible explanation for observed sublinear time dependencies for degradation below t0.5, and show that excitation of the vibrational modes of the bonds could play a significant role in the continuing degradation of deep-submicron MOSFETs operated at low voltages.
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U2 - 10.1016/S0921-4526(99)00363-4
DO - 10.1016/S0921-4526(99)00363-4
M3 - Conference article
AN - SCOPUS:0033348833
SN - 0921-4526
VL - 272
SP - 527
EP - 531
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
IS - 1-4
T2 - Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11)
Y2 - 19 July 1999 through 23 July 1999
ER -