Theory of channel hot-carrier degradation in MOSFETs

Keyphrases

• MOSFET 100%
• Depassivation 60%
• Deuterium 40%
• Deep Submicron 40%
• Scanning Tunneling Microscopy 20%
• Transistor 20%
• Induced Variation 20%
• Stress-induced 20%
• Vibrational Modes 20%
• Low Voltage 20%
• Bond Breaking 20%
• Silicon Oxide 20%
• Threshold Voltage 20%
• Oxide Interfaces 20%
• Vacuum Interface 20%
• Time Dependency 20%
• Degradation Characteristics 20%
• Threshold Energy 20%
• Sublinear Time 20%
• Hydrogen Isotope Effect 20%
• Channel Conductance 20%
• Operating Lifetime 20%

Material Science

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Hot Carrier 100%
• Silicon 60%
• Deuterium 40%
• Transistor 20%
• Oxide Interface 20%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Depassivation 60%
• Scanning Tunneling Microscopy 20%
• Induced Change 20%
• Silicon Oxide 20%
• Channel Conductance 20%
• Threshold Energy 20%