Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors

Y. S. Puzyrev; B. R. Tuttle; R. D. Schrimpf; D. M. Fleetwood; S. T. Pantelides

doi:10.1063/1.3293008

Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors

Y. S. Puzyrev, B. R. Tuttle, R. D. Schrimpf, D. M. Fleetwood, S. T. Pantelides

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

It has long been known that GaN high-electron-mobility transistors can degrade significantly under hot electron stress. More recently, an increase in the yellow luminescence was observed under similar stress conditions. The two phenomena have been attributed to defects but no specific physical mechanism has been proposed. Here we report first-principles density-functional calculations of hydrogenated Ga vacancies and show that hydrogen release by hot electrons provides an explanation for both phenomena.

Original language	English (US)
Article number	053505
Journal	Applied Physics Letters
Volume	96
Issue number	5
DOIs	https://doi.org/10.1063/1.3293008
State	Published - 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3293008

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title = "Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors",

abstract = "It has long been known that GaN high-electron-mobility transistors can degrade significantly under hot electron stress. More recently, an increase in the yellow luminescence was observed under similar stress conditions. The two phenomena have been attributed to defects but no specific physical mechanism has been proposed. Here we report first-principles density-functional calculations of hydrogenated Ga vacancies and show that hydrogen release by hot electrons provides an explanation for both phenomena.",

author = "Puzyrev, {Y. S.} and Tuttle, {B. R.} and Schrimpf, {R. D.} and Fleetwood, {D. M.} and Pantelides, {S. T.}",

note = "Funding Information: This work was supported in part by the Office of Naval research MURI under Grant No. N-00014-08-100655 and by the McMinn Endowment at Vanderbilt University. Copyright: Copyright 2010 Elsevier B.V., All rights reserved.",

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AU - Schrimpf, R. D.

AU - Fleetwood, D. M.

AU - Pantelides, S. T.

N1 - Funding Information: This work was supported in part by the Office of Naval research MURI under Grant No. N-00014-08-100655 and by the McMinn Endowment at Vanderbilt University. Copyright: Copyright 2010 Elsevier B.V., All rights reserved.

PY - 2010

Y1 - 2010

N2 - It has long been known that GaN high-electron-mobility transistors can degrade significantly under hot electron stress. More recently, an increase in the yellow luminescence was observed under similar stress conditions. The two phenomena have been attributed to defects but no specific physical mechanism has been proposed. Here we report first-principles density-functional calculations of hydrogenated Ga vacancies and show that hydrogen release by hot electrons provides an explanation for both phenomena.

AB - It has long been known that GaN high-electron-mobility transistors can degrade significantly under hot electron stress. More recently, an increase in the yellow luminescence was observed under similar stress conditions. The two phenomena have been attributed to defects but no specific physical mechanism has been proposed. Here we report first-principles density-functional calculations of hydrogenated Ga vacancies and show that hydrogen release by hot electrons provides an explanation for both phenomena.

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Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors

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