@article{e80fa2ee712640dbb69f44c60f8e241e,
title = "Theory of hyperfine active nitrogen complexes observed in 4H-SiC diodes",
abstract = "Nitrogen complexes have been implicated as defects that limit the performance of SiC-based electronics. Here, we use density functional methods to explore the properties of nitrogen vacancy complexes in bulk 4H-SiC. The stability, electronic levels and hyperfine signatures of defect complexes are reported. A nitrogen substitutional/carbon-antisite complex is found to be the strongest candidate for recently observed hyperfine active defects in 4H-SiC diodes.",
author = "Tuttle, {B. R.} and T. Aichinger and Lenahan, {P. M.} and Pantelides, {S. T.}",
note = "Funding Information: Work at Vanderbilt was supported by National Science Foundation Grant No. DMR-0907385 and by the McMinn Endowment. Blair Tuttle was also supported by the PSU Collaboration Fellowship. Work at Penn State was supported in part by the Infineon Technologies, Austria, the U.S. Army Research Laboratory, and through General Electric under the U.S. Department of Commerce under Award No. NIST 60NANB10D109. Computational support for this research was provided by the Research Computing and Cyberinfrastructure (RCC) group, a unit of ITS at Penn State—specifically, calculations were performed on the Lion-X supercomputer.",
year = "2013",
month = sep,
day = "21",
doi = "10.1063/1.4821799",
language = "English (US)",
volume = "114",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",
}