Theory of hyperfine active nitrogen complexes observed in 4H-SiC diodes

B. R. Tuttle, T. Aichinger, P. M. Lenahan, S. T. Pantelides

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Nitrogen complexes have been implicated as defects that limit the performance of SiC-based electronics. Here, we use density functional methods to explore the properties of nitrogen vacancy complexes in bulk 4H-SiC. The stability, electronic levels and hyperfine signatures of defect complexes are reported. A nitrogen substitutional/carbon-antisite complex is found to be the strongest candidate for recently observed hyperfine active defects in 4H-SiC diodes.

Original languageEnglish (US)
Article number113712
JournalJournal of Applied Physics
Issue number11
StatePublished - Sep 21 2013

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


Dive into the research topics of 'Theory of hyperfine active nitrogen complexes observed in 4H-SiC diodes'. Together they form a unique fingerprint.

Cite this