Theory of photo-ionization defects in nano-porous SiC alloys

Keyphrases

• Photoionization 100%
• Silicon Carbide 100%
• Nanoporous Silicon 100%
• Dangling Bond Defect 40%
• Nanoporous 20%
• First-principles Calculations 20%
• Electronic Structure 20%
• Defect Levels 20%
• Conduction Band 20%
• Dangling Bonds 20%
• Density Functional Method 20%
• Nearest-neighbor Interactions 20%
• Microscopic Model 20%
• Hybrid Density Functional 20%
• Carbon Defects 20%
• Oxidized Carbon 20%

Physics

• Photoionization 100%
• Silicon Carbide 100%
• Porous Silicon 100%
• Energetics 16%
• First Principle 16%
• Density Functional Theory 16%
• Conduction Band 16%
• Energy Levels 16%

Material Science

• Silicon Carbide 100%
• Porous Silicon 100%
• Density 16%