Thermal Analysis of High-Power Flip-Chip-Bonded Photodiodes

Yang Shen, John Gaskins, Xiaojun Xie, Brian M. Foley, Ramez Cheaito, Patrick E. Hopkins, Joe C. Campbell

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


The performance of high-power photodiodes flip-chip bonded on polycrystalline aluminum nitride (AlN), single-crystal AlN, and diamond submounts are compared. The thermal boundary conductance (inverse of the thermal boundary resistance) between submount/titanium interfaces was measured and found to be the primary impedance to heat dissipation. Thermal profiles of the flip-chip-bonded devices were simulated to project the power density at failure, which is found to be inversely proportional to the diameter of the photodiodes.

Original languageEnglish (US)
Article number8003262
Pages (from-to)4242-4246
Number of pages5
JournalJournal of Lightwave Technology
Issue number19
StatePublished - Oct 1 2017

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics


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