Thermal Analysis of High-Power Flip-Chip-Bonded Photodiodes

Yang Shen; John Gaskins; Xiaojun Xie; Brian M. Foley; Ramez Cheaito; Patrick E. Hopkins; Joe C. Campbell

doi:10.1109/JLT.2017.2736884

Thermal Analysis of High-Power Flip-Chip-Bonded Photodiodes

Yang Shen, John Gaskins, Xiaojun Xie, Brian M. Foley, Ramez Cheaito, Patrick E. Hopkins, Joe C. Campbell

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The performance of high-power photodiodes flip-chip bonded on polycrystalline aluminum nitride (AlN), single-crystal AlN, and diamond submounts are compared. The thermal boundary conductance (inverse of the thermal boundary resistance) between submount/titanium interfaces was measured and found to be the primary impedance to heat dissipation. Thermal profiles of the flip-chip-bonded devices were simulated to project the power density at failure, which is found to be inversely proportional to the diameter of the photodiodes.

Original language	English (US)
Article number	8003262
Pages (from-to)	4242-4246
Number of pages	5
Journal	Journal of Lightwave Technology
Volume	35
Issue number	19
DOIs	https://doi.org/10.1109/JLT.2017.2736884
State	Published - Oct 1 2017

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics

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10.1109/JLT.2017.2736884

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title = "Thermal Analysis of High-Power Flip-Chip-Bonded Photodiodes",

abstract = "The performance of high-power photodiodes flip-chip bonded on polycrystalline aluminum nitride (AlN), single-crystal AlN, and diamond submounts are compared. The thermal boundary conductance (inverse of the thermal boundary resistance) between submount/titanium interfaces was measured and found to be the primary impedance to heat dissipation. Thermal profiles of the flip-chip-bonded devices were simulated to project the power density at failure, which is found to be inversely proportional to the diameter of the photodiodes.",

author = "Yang Shen and John Gaskins and Xiaojun Xie and Foley, \{Brian M.\} and Ramez Cheaito and Hopkins, \{Patrick E.\} and Campbell, \{Joe C.\}",

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AU - Shen, Yang

AU - Gaskins, John

AU - Xie, Xiaojun

AU - Foley, Brian M.

AU - Cheaito, Ramez

AU - Hopkins, Patrick E.

AU - Campbell, Joe C.

PY - 2017/10/1

Y1 - 2017/10/1

N2 - The performance of high-power photodiodes flip-chip bonded on polycrystalline aluminum nitride (AlN), single-crystal AlN, and diamond submounts are compared. The thermal boundary conductance (inverse of the thermal boundary resistance) between submount/titanium interfaces was measured and found to be the primary impedance to heat dissipation. Thermal profiles of the flip-chip-bonded devices were simulated to project the power density at failure, which is found to be inversely proportional to the diameter of the photodiodes.

AB - The performance of high-power photodiodes flip-chip bonded on polycrystalline aluminum nitride (AlN), single-crystal AlN, and diamond submounts are compared. The thermal boundary conductance (inverse of the thermal boundary resistance) between submount/titanium interfaces was measured and found to be the primary impedance to heat dissipation. Thermal profiles of the flip-chip-bonded devices were simulated to project the power density at failure, which is found to be inversely proportional to the diameter of the photodiodes.

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JO - Journal of Lightwave Technology

JF - Journal of Lightwave Technology

IS - 19

M1 - 8003262

ER -

Thermal Analysis of High-Power Flip-Chip-Bonded Photodiodes

Abstract

All Science Journal Classification (ASJC) codes

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