Abstract
InGaAs-InP charge-compensated unitraveling-carrier photodiodes with thick depletion region are demonstrated. A 40-μm-diameter photodiode achieved 10-GHz bandwidth and 24.5 dBm RF output power. A 100-μm-diameter photodiode achieved bandwidth of 2 GHz and 29 dBm RF output power. Simulation of the temperature distribution in devices is also presented.
Original language | English (US) |
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Pages (from-to) | 1255-1258 |
Number of pages | 4 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 42 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2006 |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering