Thermal analysis of high-power InGaAs-InP photodiodes

Ning Duan, Xin Wang, Ning Li, Han Din Liu, Joe C. Campbell

Research output: Contribution to journalArticlepeer-review

50 Scopus citations

Abstract

InGaAs-InP charge-compensated unitraveling-carrier photodiodes with thick depletion region are demonstrated. A 40-μm-diameter photodiode achieved 10-GHz bandwidth and 24.5 dBm RF output power. A 100-μm-diameter photodiode achieved bandwidth of 2 GHz and 29 dBm RF output power. Simulation of the temperature distribution in devices is also presented.

Original languageEnglish (US)
Pages (from-to)1255-1258
Number of pages4
JournalIEEE Journal of Quantum Electronics
Volume42
Issue number12
DOIs
StatePublished - Dec 2006

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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