Thermal analysis of high-power InGaAs-InP photodiodes

Ning Duan; Xin Wang; Ning Li; Han Din Liu; Joe C. Campbell

doi:10.1109/JQE.2006.883498

Thermal analysis of high-power InGaAs-InP photodiodes

Ning Duan
, Xin Wang
, Ning Li
, Han Din Liu
, Joe C. Campbell

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

InGaAs-InP charge-compensated unitraveling-carrier photodiodes with thick depletion region are demonstrated. A 40-μm-diameter photodiode achieved 10-GHz bandwidth and 24.5 dBm RF output power. A 100-μm-diameter photodiode achieved bandwidth of 2 GHz and 29 dBm RF output power. Simulation of the temperature distribution in devices is also presented.

Original language	English (US)
Pages (from-to)	1255-1258
Number of pages	4
Journal	IEEE Journal of Quantum Electronics
Volume	42
Issue number	12
DOIs	https://doi.org/10.1109/JQE.2006.883498
State	Published - Dec 2006

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2006.883498

Cite this

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title = "Thermal analysis of high-power InGaAs-InP photodiodes",

abstract = "InGaAs-InP charge-compensated unitraveling-carrier photodiodes with thick depletion region are demonstrated. A 40-μm-diameter photodiode achieved 10-GHz bandwidth and 24.5 dBm RF output power. A 100-μm-diameter photodiode achieved bandwidth of 2 GHz and 29 dBm RF output power. Simulation of the temperature distribution in devices is also presented.",

author = "Ning Duan and Xin Wang and Ning Li and Liu, \{Han Din\} and Campbell, \{Joe C.\}",

year = "2006",

month = dec,

doi = "10.1109/JQE.2006.883498",

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AU - Duan, Ning

AU - Wang, Xin

AU - Li, Ning

AU - Liu, Han Din

AU - Campbell, Joe C.

PY - 2006/12

Y1 - 2006/12

N2 - InGaAs-InP charge-compensated unitraveling-carrier photodiodes with thick depletion region are demonstrated. A 40-μm-diameter photodiode achieved 10-GHz bandwidth and 24.5 dBm RF output power. A 100-μm-diameter photodiode achieved bandwidth of 2 GHz and 29 dBm RF output power. Simulation of the temperature distribution in devices is also presented.

AB - InGaAs-InP charge-compensated unitraveling-carrier photodiodes with thick depletion region are demonstrated. A 40-μm-diameter photodiode achieved 10-GHz bandwidth and 24.5 dBm RF output power. A 100-μm-diameter photodiode achieved bandwidth of 2 GHz and 29 dBm RF output power. Simulation of the temperature distribution in devices is also presented.

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UR - https://www.scopus.com/pages/publications/46849122584#tab=citedBy

U2 - 10.1109/JQE.2006.883498

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M3 - Article

AN - SCOPUS:46849122584

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JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

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ER -

Thermal analysis of high-power InGaAs-InP photodiodes

Abstract

All Science Journal Classification (ASJC) codes

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