Thermal anneal recovery of silicon surface barriers from argon ion implantation damage

K. Giewont; S. Ashok; A. Mogro-Campero

doi:10.1016/0040-6090(86)90298-1

Thermal anneal recovery of silicon surface barriers from argon ion implantation damage

K. Giewont, S. Ashok, A. Mogro-Campero

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Abstract

The recovery of the electrical properties of silicon surface barriers subject to argon ion bombardment damage by isochronal furnace annealing has been studied over the temperature range 500-1000°C. Investigation of the characteristics of Al/n-Si and Al/p-Si Schottky barriers fabricated on samples implanted with variable-dose 10 keV argon ions reveals a clear dependence of the Schottky barrier height as well as the surface dopant concentration on the anneal temperature and ion dose. The recovery of the electrical barrier is not complete even at 1000°C for argon doses exceeding 10¹⁴ cm^-2, and the influence of the anneal is found to be different for n-Si and p-Si.

Original language	English (US)
Pages (from-to)	13-20
Number of pages	8
Journal	Thin Solid Films
Volume	142
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(86)90298-1
State	Published - Aug 15 1986

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(86)90298-1

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title = "Thermal anneal recovery of silicon surface barriers from argon ion implantation damage",

abstract = "The recovery of the electrical properties of silicon surface barriers subject to argon ion bombardment damage by isochronal furnace annealing has been studied over the temperature range 500-1000°C. Investigation of the characteristics of Al/n-Si and Al/p-Si Schottky barriers fabricated on samples implanted with variable-dose 10 keV argon ions reveals a clear dependence of the Schottky barrier height as well as the surface dopant concentration on the anneal temperature and ion dose. The recovery of the electrical barrier is not complete even at 1000°C for argon doses exceeding 1014 cm-2, and the influence of the anneal is found to be different for n-Si and p-Si.",

author = "K. Giewont and S. Ashok and A. Mogro-Campero",

note = "Funding Information: This work was supported in part by the U.S. National Science Foundation under Grant ECS-8305646. The authors are also grateful to Professor K. Vedam and Dr. P. J. McMarr for the spectroscopic ellipsometry measurements.",

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doi = "10.1016/0040-6090(86)90298-1",

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T1 - Thermal anneal recovery of silicon surface barriers from argon ion implantation damage

AU - Giewont, K.

AU - Ashok, S.

AU - Mogro-Campero, A.

N1 - Funding Information: This work was supported in part by the U.S. National Science Foundation under Grant ECS-8305646. The authors are also grateful to Professor K. Vedam and Dr. P. J. McMarr for the spectroscopic ellipsometry measurements.

PY - 1986/8/15

Y1 - 1986/8/15

N2 - The recovery of the electrical properties of silicon surface barriers subject to argon ion bombardment damage by isochronal furnace annealing has been studied over the temperature range 500-1000°C. Investigation of the characteristics of Al/n-Si and Al/p-Si Schottky barriers fabricated on samples implanted with variable-dose 10 keV argon ions reveals a clear dependence of the Schottky barrier height as well as the surface dopant concentration on the anneal temperature and ion dose. The recovery of the electrical barrier is not complete even at 1000°C for argon doses exceeding 1014 cm-2, and the influence of the anneal is found to be different for n-Si and p-Si.

AB - The recovery of the electrical properties of silicon surface barriers subject to argon ion bombardment damage by isochronal furnace annealing has been studied over the temperature range 500-1000°C. Investigation of the characteristics of Al/n-Si and Al/p-Si Schottky barriers fabricated on samples implanted with variable-dose 10 keV argon ions reveals a clear dependence of the Schottky barrier height as well as the surface dopant concentration on the anneal temperature and ion dose. The recovery of the electrical barrier is not complete even at 1000°C for argon doses exceeding 1014 cm-2, and the influence of the anneal is found to be different for n-Si and p-Si.

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Thermal anneal recovery of silicon surface barriers from argon ion implantation damage

Abstract

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