Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

M. T. Alam; M. S. Bresnehan; J. A. Robinson; M. A. Haque

doi:10.1063/1.4861468

Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

M. T. Alam, M. S. Bresnehan, J. A. Robinson, M. A. Haque

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m^-1 K^-1, is lower than the bulk basal plane value (390 W m^-1 K^-1) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics.

Original language	English (US)
Article number	013113
Journal	Applied Physics Letters
Volume	104
Issue number	1
DOIs	https://doi.org/10.1063/1.4861468
State	Published - Jan 6 2014

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4861468

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title = "Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films",

abstract = "Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m-1 K-1, is lower than the bulk basal plane value (390 W m-1 K-1) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics.",

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AU - Haque, M. A.

PY - 2014/1/6

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N2 - Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m-1 K-1, is lower than the bulk basal plane value (390 W m-1 K-1) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics.

AB - Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m-1 K-1, is lower than the bulk basal plane value (390 W m-1 K-1) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics.

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Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

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