@inproceedings{e081ac7052234491bb912edf0f0d453a,
title = "Thermal evolution of defects in semi-insulating 4H SiC",
abstract = "High temperature anneals were used to study the evolution of native defects in semiinsulating (SI), ultrahigh purity SiC using electron paramagnetic resonance (EPR), infrared and visible photoluminescence (PL) and COREMA (Contactless Resistivity Mapping) measurements. In EPR we observe a defect that we tentatively identify as VC-CSi-VC. The EPR intensities of this defect and the UD1 IRPL increase significantly with annealing in all samples.",
author = "Carlos, {W. E.} and Glaser, {E. R.} and Garces, {N. Y.} and Shanabrook, {B. V.} and Fanton, {M. A.}",
year = "2006",
doi = "10.4028/0-87849-425-1.531",
language = "English (US)",
isbn = "9780878494255",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
number = "PART 1",
pages = "531--534",
booktitle = "Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005",
edition = "PART 1",
note = "International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) ; Conference date: 18-09-2005 Through 23-09-2005",
}