Thermal evolution of defects in semi-insulating 4H SiC

W. E. Carlos; E. R. Glaser; N. Y. Garces; B. V. Shanabrook; M. A. Fanton

doi:10.4028/0-87849-425-1.531

Thermal evolution of defects in semi-insulating 4H SiC

W. E. Carlos, E. R. Glaser, N. Y. Garces, B. V. Shanabrook, M. A. Fanton

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

High temperature anneals were used to study the evolution of native defects in semiinsulating (SI), ultrahigh purity SiC using electron paramagnetic resonance (EPR), infrared and visible photoluminescence (PL) and COREMA (Contactless Resistivity Mapping) measurements. In EPR we observe a defect that we tentatively identify as V_C-C_Si-V_C. The EPR intensities of this defect and the UD1 IRPL increase significantly with annealing in all samples.

Original language	English (US)
Title of host publication	Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
Publisher	Trans Tech Publications Ltd
Pages	531-534
Number of pages	4
Edition	PART 1
ISBN (Print)	9780878494255
DOIs	https://doi.org/10.4028/0-87849-425-1.531
State	Published - 2006
Event	International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States Duration: Sep 18 2005 → Sep 23 2005

Publication series

Name	Materials Science Forum
Number	PART 1
Volume	527-529
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
Country/Territory	United States
City	Pittsburgh, PA
Period	9/18/05 → 9/23/05

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/0-87849-425-1.531

Cite this

Carlos, W. E., Glaser, E. R., Garces, N. Y., Shanabrook, B. V., & Fanton, M. A. (2006). Thermal evolution of defects in semi-insulating 4H SiC. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005 (PART 1 ed., pp. 531-534). (Materials Science Forum; Vol. 527-529, No. PART 1). Trans Tech Publications Ltd. https://doi.org/10.4028/0-87849-425-1.531

@inproceedings{e081ac7052234491bb912edf0f0d453a,

title = "Thermal evolution of defects in semi-insulating 4H SiC",

abstract = "High temperature anneals were used to study the evolution of native defects in semiinsulating (SI), ultrahigh purity SiC using electron paramagnetic resonance (EPR), infrared and visible photoluminescence (PL) and COREMA (Contactless Resistivity Mapping) measurements. In EPR we observe a defect that we tentatively identify as VC-CSi-VC. The EPR intensities of this defect and the UD1 IRPL increase significantly with annealing in all samples.",

author = "Carlos, \{W. E.\} and Glaser, \{E. R.\} and Garces, \{N. Y.\} and Shanabrook, \{B. V.\} and Fanton, \{M. A.\}",

year = "2006",

doi = "10.4028/0-87849-425-1.531",

language = "English (US)",

isbn = "9780878494255",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

number = "PART 1",

pages = "531--534",

booktitle = "Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005",

edition = "PART 1",

note = "International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) ; Conference date: 18-09-2005 Through 23-09-2005",

}

Carlos, WE, Glaser, ER, Garces, NY, Shanabrook, BV & Fanton, MA 2006, Thermal evolution of defects in semi-insulating 4H SiC. in Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 edn, Materials Science Forum, no. PART 1, vol. 527-529, Trans Tech Publications Ltd, pp. 531-534, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, United States, 9/18/05. https://doi.org/10.4028/0-87849-425-1.531

Thermal evolution of defects in semi-insulating 4H SiC. / Carlos, W. E.; Glaser, E. R.; Garces, N. Y. et al.
Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1. ed. Trans Tech Publications Ltd, 2006. p. 531-534 (Materials Science Forum; Vol. 527-529, No. PART 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Thermal evolution of defects in semi-insulating 4H SiC

AU - Carlos, W. E.

AU - Glaser, E. R.

AU - Garces, N. Y.

AU - Shanabrook, B. V.

AU - Fanton, M. A.

PY - 2006

Y1 - 2006

N2 - High temperature anneals were used to study the evolution of native defects in semiinsulating (SI), ultrahigh purity SiC using electron paramagnetic resonance (EPR), infrared and visible photoluminescence (PL) and COREMA (Contactless Resistivity Mapping) measurements. In EPR we observe a defect that we tentatively identify as VC-CSi-VC. The EPR intensities of this defect and the UD1 IRPL increase significantly with annealing in all samples.

AB - High temperature anneals were used to study the evolution of native defects in semiinsulating (SI), ultrahigh purity SiC using electron paramagnetic resonance (EPR), infrared and visible photoluminescence (PL) and COREMA (Contactless Resistivity Mapping) measurements. In EPR we observe a defect that we tentatively identify as VC-CSi-VC. The EPR intensities of this defect and the UD1 IRPL increase significantly with annealing in all samples.

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M3 - Conference contribution

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SN - 9780878494255

T3 - Materials Science Forum

SP - 531

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BT - Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005

PB - Trans Tech Publications Ltd

T2 - International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)

Y2 - 18 September 2005 through 23 September 2005

ER -

Carlos WE, Glaser ER, Garces NY, Shanabrook BV, Fanton MA. Thermal evolution of defects in semi-insulating 4H SiC. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. Trans Tech Publications Ltd. 2006. p. 531-534. (Materials Science Forum; PART 1). doi: 10.4028/0-87849-425-1.531

Thermal evolution of defects in semi-insulating 4H SiC

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