Thermal growth of He-cavities in Si studied by cascade implantation

E. Ntsoenzok; R. El Bouayadi; G. Regula; B. Pichaud; S. Ashok

doi:10.1557/proc-864-e9.7

Thermal growth of He-cavities in Si studied by cascade implantation

E. Ntsoenzok, R. El Bouayadi, G. Regula, B. Pichaud, S. Ashok

Research output: Contribution to journal › Conference article › peer-review

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Abstract

Float Zone (FZ) silicon samples have been cascade-implanted with helium ions at energies decreasing from 1.9 MeV to 0.8 MeV in steps of 0.1 MeV, with flux maintained between 5 × 10¹² and 1 × 10¹³ He cm^-2. The dose was 5×10¹⁶ He cm^-2 for all the energies except 0.8 MeV where a lower dose of 3×10¹⁶ He cm^-2 was used. After thermal annealing, the sample was studied by cross section transmission electron microscopy (XTEM) using a Field Emission Gun Microscope (Jeol 2010F). Our results clearly demonstrate that these cavities mainly grow by the Ostwald ripening mechanism. This means a growth by exchange of He and vacancies from smaller to bigger cavities. Further this study provides essential data for resolving the controversy on the growth mechanism governing He-cavities.

Original language	English (US)
Article number	E9.7
Pages (from-to)	461-466
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	864
DOIs	https://doi.org/10.1557/proc-864-e9.7
State	Published - 2005
Event	2005 materials Research Society Spring Meeting - San Francisco, CA, United States Duration: Mar 28 2005 → Apr 1 2005

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Thermal growth of He-cavities in Si studied by cascade implantation",

abstract = "Float Zone (FZ) silicon samples have been cascade-implanted with helium ions at energies decreasing from 1.9 MeV to 0.8 MeV in steps of 0.1 MeV, with flux maintained between 5 × 1012 and 1 × 1013 He cm-2. The dose was 5×1016 He cm-2 for all the energies except 0.8 MeV where a lower dose of 3×1016 He cm-2 was used. After thermal annealing, the sample was studied by cross section transmission electron microscopy (XTEM) using a Field Emission Gun Microscope (Jeol 2010F). Our results clearly demonstrate that these cavities mainly grow by the Ostwald ripening mechanism. This means a growth by exchange of He and vacancies from smaller to bigger cavities. Further this study provides essential data for resolving the controversy on the growth mechanism governing He-cavities.",

author = "E. Ntsoenzok and Bouayadi, {R. El} and G. Regula and B. Pichaud and S. Ashok",

year = "2005",

doi = "10.1557/proc-864-e9.7",

language = "English (US)",

volume = "864",

pages = "461--466",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "2005 materials Research Society Spring Meeting ; Conference date: 28-03-2005 Through 01-04-2005",

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TY - JOUR

T1 - Thermal growth of He-cavities in Si studied by cascade implantation

AU - Ntsoenzok, E.

AU - Bouayadi, R. El

AU - Regula, G.

AU - Pichaud, B.

AU - Ashok, S.

PY - 2005

Y1 - 2005

N2 - Float Zone (FZ) silicon samples have been cascade-implanted with helium ions at energies decreasing from 1.9 MeV to 0.8 MeV in steps of 0.1 MeV, with flux maintained between 5 × 1012 and 1 × 1013 He cm-2. The dose was 5×1016 He cm-2 for all the energies except 0.8 MeV where a lower dose of 3×1016 He cm-2 was used. After thermal annealing, the sample was studied by cross section transmission electron microscopy (XTEM) using a Field Emission Gun Microscope (Jeol 2010F). Our results clearly demonstrate that these cavities mainly grow by the Ostwald ripening mechanism. This means a growth by exchange of He and vacancies from smaller to bigger cavities. Further this study provides essential data for resolving the controversy on the growth mechanism governing He-cavities.

AB - Float Zone (FZ) silicon samples have been cascade-implanted with helium ions at energies decreasing from 1.9 MeV to 0.8 MeV in steps of 0.1 MeV, with flux maintained between 5 × 1012 and 1 × 1013 He cm-2. The dose was 5×1016 He cm-2 for all the energies except 0.8 MeV where a lower dose of 3×1016 He cm-2 was used. After thermal annealing, the sample was studied by cross section transmission electron microscopy (XTEM) using a Field Emission Gun Microscope (Jeol 2010F). Our results clearly demonstrate that these cavities mainly grow by the Ostwald ripening mechanism. This means a growth by exchange of He and vacancies from smaller to bigger cavities. Further this study provides essential data for resolving the controversy on the growth mechanism governing He-cavities.

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DO - 10.1557/proc-864-e9.7

M3 - Conference article

AN - SCOPUS:30544443797

SN - 0272-9172

VL - 864

SP - 461

EP - 466

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

M1 - E9.7

T2 - 2005 materials Research Society Spring Meeting

Y2 - 28 March 2005 through 1 April 2005

ER -

Thermal growth of He-cavities in Si studied by cascade implantation

Abstract

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