TY - GEN
T1 - Thermal moore's law and near-field thermal conductance in carbon-based electronics
AU - Rotkin, Slava V.
PY - 2009/11/23
Y1 - 2009/11/23
N2 - The novel thermal conductance mechanism, theoretically predicted and experimentally measured in nanotube field-effect transistors (FET), is discussed with respect to the power dissipation problem of modern carbon-based electronics. Such an effect is due to the near-field coupling of the charge carriers in the transistor channel with the local electric field of the surface electromagnetic modes. The coupling leads to a quantum electrodynamic (QED) energy exchange between the hot electrons in FET channel and the optical polar phonon bath being in thermal equilibrium with the substrate. For an example of a NT on silica, this QED coupling mechanism is shown to exceed significantly the interface Kapitza conductance, that is, the classical phonon heat transport. The QED thermal conductance is proposed to play dominant role in the energy dissipation in nanoelectronics with a hetero-interface between the device channel and the polar substrate.
AB - The novel thermal conductance mechanism, theoretically predicted and experimentally measured in nanotube field-effect transistors (FET), is discussed with respect to the power dissipation problem of modern carbon-based electronics. Such an effect is due to the near-field coupling of the charge carriers in the transistor channel with the local electric field of the surface electromagnetic modes. The coupling leads to a quantum electrodynamic (QED) energy exchange between the hot electrons in FET channel and the optical polar phonon bath being in thermal equilibrium with the substrate. For an example of a NT on silica, this QED coupling mechanism is shown to exceed significantly the interface Kapitza conductance, that is, the classical phonon heat transport. The QED thermal conductance is proposed to play dominant role in the energy dissipation in nanoelectronics with a hetero-interface between the device channel and the polar substrate.
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U2 - 10.1117/12.826326
DO - 10.1117/12.826326
M3 - Conference contribution
AN - SCOPUS:70449644680
SN - 9780819476890
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Carbon Nanotubes, Graphene, and Associated Devices II
T2 - Carbon Nanotubes, Graphene, and Associated Devices II
Y2 - 5 August 2009 through 6 August 2009
ER -