Thermal rectification in thin film metalattice structures: A computational study

Devon A. Eichfeld, Weinan Chen, Ismaila Dabo, Brian M. Foley, Bladimir Ramos-Alvarado

Research output: Contribution to journalArticlepeer-review


Thermal rectification is an asymmetric heat transfer process where directionally dependent transport occurs along a given axis. In this work, geometric parameters that govern thermal rectification in solids composed of various semiconducting materials were investigated utilizing metalattice data for seven materials with pore sizes ranging between 2 and 30 nm. Using numerical simulation, thermal rectification was calculated at different thermal biases in single material systems, including silicon, cubic boron nitride, and diamond, among others. The largest thermal rectification for each material was exhibited in bilayer sample stacks that were thermally matched (i.e., the thermal resistance of each layer in the stack is equal in either forward or reverse direction). Of the materials tested, diamond provided the highest thermal rectification for all cases, with its best case achieving a thermal rectification of 57.2%. This novel thermal functionality will find application in advanced applications for temperature regulation, including resonator systems where thermal effects may significantly alter and/or degrade performance.

Original languageEnglish (US)
Article number115101
JournalJournal of Applied Physics
Issue number11
StatePublished - Mar 21 2023

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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