Thermal stability of amorphous LaScO 3 films on silicon

L. F. Edge; D. G. Schlom; S. Rivillon; Y. J. Chabal; M. P. Agustin; S. Stemmer; T. Lee; M. J. Kim; H. S. Craft; J. P. Maria; M. E. Hawley; B. Holländer; J. Schubert; K. Eisenbeiser

doi:10.1063/1.2222302

Thermal stability of amorphous LaScO ₃ films on silicon

L. F. Edge, D. G. Schlom, S. Rivillon, Y. J. Chabal, M. P. Agustin, S. Stemmer, T. Lee, M. J. Kim, H. S. Craft, J. P. Maria, M. E. Hawley, B. Holländer, J. Schubert, K. Eisenbeiser

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The thermal stability of amorphous LaScO ₃ thin films deposited by molecular-beam deposition directly on (001) Si was investigated by high-resolution transmission electron microscopy (HRTEM), transmission infrared absorption spectroscopy (IRAS), and x-ray diffraction (XRD). IRAS indicated that the as-deposited films contained <0.1 Å of SiO ₂ at the interface between LaScO ₃ and silicon. XRD studies showed that the films remained amorphous after annealing in N ₂ at 700 °C, although HRTEM showed structural order on an -1 nm length scale even in the as-deposited films. By 800 °C, the LaScO ₃ had started to crystallize and formed a ∼5 nm thick Sc-deficient interlayer between it and silicon.

Original language	English (US)
Article number	062902
Journal	Applied Physics Letters
Volume	89
Issue number	6
DOIs	https://doi.org/10.1063/1.2222302
State	Published - 2006

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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@article{71ac21309a42452fb7b62684436c66de,

title = "Thermal stability of amorphous LaScO 3 films on silicon",

abstract = "The thermal stability of amorphous LaScO 3 thin films deposited by molecular-beam deposition directly on (001) Si was investigated by high-resolution transmission electron microscopy (HRTEM), transmission infrared absorption spectroscopy (IRAS), and x-ray diffraction (XRD). IRAS indicated that the as-deposited films contained <0.1 {\AA} of SiO 2 at the interface between LaScO 3 and silicon. XRD studies showed that the films remained amorphous after annealing in N 2 at 700 °C, although HRTEM showed structural order on an -1 nm length scale even in the as-deposited films. By 800 °C, the LaScO 3 had started to crystallize and formed a ∼5 nm thick Sc-deficient interlayer between it and silicon.",

author = "Edge, {L. F.} and Schlom, {D. G.} and S. Rivillon and Chabal, {Y. J.} and Agustin, {M. P.} and S. Stemmer and T. Lee and Kim, {M. J.} and Craft, {H. S.} and Maria, {J. P.} and Hawley, {M. E.} and B. Holl{\"a}nder and J. Schubert and K. Eisenbeiser",

note = "Funding Information: Six of the authors (L.F.E., D.G.S., H.S.C., J.P.M., M.P.A., and S.S.) gratefully acknowledge the financial support of the Semiconductor Research Corporation (SRC) and SEMATECH through the SRC/SEMATECH FEP Center as well as insightful discussions with Gerry Lucovsky. One of them (L.F.E.) gratefully acknowledges an AMD/SRC fellowship. Two authors (S.R. and Y.J.C.) acknowledge the support of NSF (CHE-0415652).",

year = "2006",

doi = "10.1063/1.2222302",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Thermal stability of amorphous LaScO 3 films on silicon

AU - Edge, L. F.

AU - Schlom, D. G.

AU - Rivillon, S.

AU - Chabal, Y. J.

AU - Agustin, M. P.

AU - Stemmer, S.

AU - Lee, T.

AU - Kim, M. J.

AU - Craft, H. S.

AU - Maria, J. P.

AU - Hawley, M. E.

AU - Holländer, B.

AU - Schubert, J.

AU - Eisenbeiser, K.

N1 - Funding Information: Six of the authors (L.F.E., D.G.S., H.S.C., J.P.M., M.P.A., and S.S.) gratefully acknowledge the financial support of the Semiconductor Research Corporation (SRC) and SEMATECH through the SRC/SEMATECH FEP Center as well as insightful discussions with Gerry Lucovsky. One of them (L.F.E.) gratefully acknowledges an AMD/SRC fellowship. Two authors (S.R. and Y.J.C.) acknowledge the support of NSF (CHE-0415652).

PY - 2006

Y1 - 2006

N2 - The thermal stability of amorphous LaScO 3 thin films deposited by molecular-beam deposition directly on (001) Si was investigated by high-resolution transmission electron microscopy (HRTEM), transmission infrared absorption spectroscopy (IRAS), and x-ray diffraction (XRD). IRAS indicated that the as-deposited films contained <0.1 Å of SiO 2 at the interface between LaScO 3 and silicon. XRD studies showed that the films remained amorphous after annealing in N 2 at 700 °C, although HRTEM showed structural order on an -1 nm length scale even in the as-deposited films. By 800 °C, the LaScO 3 had started to crystallize and formed a ∼5 nm thick Sc-deficient interlayer between it and silicon.

AB - The thermal stability of amorphous LaScO 3 thin films deposited by molecular-beam deposition directly on (001) Si was investigated by high-resolution transmission electron microscopy (HRTEM), transmission infrared absorption spectroscopy (IRAS), and x-ray diffraction (XRD). IRAS indicated that the as-deposited films contained <0.1 Å of SiO 2 at the interface between LaScO 3 and silicon. XRD studies showed that the films remained amorphous after annealing in N 2 at 700 °C, although HRTEM showed structural order on an -1 nm length scale even in the as-deposited films. By 800 °C, the LaScO 3 had started to crystallize and formed a ∼5 nm thick Sc-deficient interlayer between it and silicon.

UR - http://www.scopus.com/inward/record.url?scp=33747121612&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33747121612&partnerID=8YFLogxK

U2 - 10.1063/1.2222302

DO - 10.1063/1.2222302

M3 - Article

AN - SCOPUS:33747121612

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 062902

ER -

Thermal stability of amorphous LaScO ₃ films on silicon

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