Thermal stability of amorphous LaScO 3 films on silicon

L. F. Edge; D. G. Schlom; S. Rivillon; Y. J. Chabal; M. P. Agustin; S. Stemmer; T. Lee; M. J. Kim; H. S. Craft; J. P. Maria; M. E. Hawley; B. Holländer; J. Schubert; K. Eisenbeiser

doi:10.1063/1.2222302

Thermal stability of amorphous LaScO ₃ films on silicon

L. F. Edge
, D. G. Schlom
, S. Rivillon
, Y. J. Chabal
, M. P. Agustin
, S. Stemmer
, T. Lee
, M. J. Kim
, H. S. Craft
, J. P. Maria
, M. E. Hawley
, B. Holländer
, J. Schubert
, K. Eisenbeiser

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The thermal stability of amorphous LaScO ₃ thin films deposited by molecular-beam deposition directly on (001) Si was investigated by high-resolution transmission electron microscopy (HRTEM), transmission infrared absorption spectroscopy (IRAS), and x-ray diffraction (XRD). IRAS indicated that the as-deposited films contained <0.1 Å of SiO ₂ at the interface between LaScO ₃ and silicon. XRD studies showed that the films remained amorphous after annealing in N ₂ at 700 °C, although HRTEM showed structural order on an -1 nm length scale even in the as-deposited films. By 800 °C, the LaScO ₃ had started to crystallize and formed a ∼5 nm thick Sc-deficient interlayer between it and silicon.

Original language	English (US)
Article number	062902
Journal	Applied Physics Letters
Volume	89
Issue number	6
DOIs	https://doi.org/10.1063/1.2222302
State	Published - 2006

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2222302

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@article{71ac21309a42452fb7b62684436c66de,

title = "Thermal stability of amorphous LaScO 3 films on silicon",

abstract = "The thermal stability of amorphous LaScO 3 thin films deposited by molecular-beam deposition directly on (001) Si was investigated by high-resolution transmission electron microscopy (HRTEM), transmission infrared absorption spectroscopy (IRAS), and x-ray diffraction (XRD). IRAS indicated that the as-deposited films contained <0.1 {\AA} of SiO 2 at the interface between LaScO 3 and silicon. XRD studies showed that the films remained amorphous after annealing in N 2 at 700 °C, although HRTEM showed structural order on an -1 nm length scale even in the as-deposited films. By 800 °C, the LaScO 3 had started to crystallize and formed a ∼5 nm thick Sc-deficient interlayer between it and silicon.",

author = "Edge, \{L. F.\} and Schlom, \{D. G.\} and S. Rivillon and Chabal, \{Y. J.\} and Agustin, \{M. P.\} and S. Stemmer and T. Lee and Kim, \{M. J.\} and Craft, \{H. S.\} and Maria, \{J. P.\} and Hawley, \{M. E.\} and B. Holl{\"a}nder and J. Schubert and K. Eisenbeiser",

note = "Funding Information: Six of the authors (L.F.E., D.G.S., H.S.C., J.P.M., M.P.A., and S.S.) gratefully acknowledge the financial support of the Semiconductor Research Corporation (SRC) and SEMATECH through the SRC/SEMATECH FEP Center as well as insightful discussions with Gerry Lucovsky. One of them (L.F.E.) gratefully acknowledges an AMD/SRC fellowship. Two authors (S.R. and Y.J.C.) acknowledge the support of NSF (CHE-0415652).",

year = "2006",

doi = "10.1063/1.2222302",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Thermal stability of amorphous LaScO 3 films on silicon

AU - Edge, L. F.

AU - Schlom, D. G.

AU - Rivillon, S.

AU - Chabal, Y. J.

AU - Agustin, M. P.

AU - Stemmer, S.

AU - Lee, T.

AU - Kim, M. J.

AU - Craft, H. S.

AU - Maria, J. P.

AU - Hawley, M. E.

AU - Holländer, B.

AU - Schubert, J.

AU - Eisenbeiser, K.

N1 - Funding Information: Six of the authors (L.F.E., D.G.S., H.S.C., J.P.M., M.P.A., and S.S.) gratefully acknowledge the financial support of the Semiconductor Research Corporation (SRC) and SEMATECH through the SRC/SEMATECH FEP Center as well as insightful discussions with Gerry Lucovsky. One of them (L.F.E.) gratefully acknowledges an AMD/SRC fellowship. Two authors (S.R. and Y.J.C.) acknowledge the support of NSF (CHE-0415652).

PY - 2006

Y1 - 2006

N2 - The thermal stability of amorphous LaScO 3 thin films deposited by molecular-beam deposition directly on (001) Si was investigated by high-resolution transmission electron microscopy (HRTEM), transmission infrared absorption spectroscopy (IRAS), and x-ray diffraction (XRD). IRAS indicated that the as-deposited films contained <0.1 Å of SiO 2 at the interface between LaScO 3 and silicon. XRD studies showed that the films remained amorphous after annealing in N 2 at 700 °C, although HRTEM showed structural order on an -1 nm length scale even in the as-deposited films. By 800 °C, the LaScO 3 had started to crystallize and formed a ∼5 nm thick Sc-deficient interlayer between it and silicon.

AB - The thermal stability of amorphous LaScO 3 thin films deposited by molecular-beam deposition directly on (001) Si was investigated by high-resolution transmission electron microscopy (HRTEM), transmission infrared absorption spectroscopy (IRAS), and x-ray diffraction (XRD). IRAS indicated that the as-deposited films contained <0.1 Å of SiO 2 at the interface between LaScO 3 and silicon. XRD studies showed that the films remained amorphous after annealing in N 2 at 700 °C, although HRTEM showed structural order on an -1 nm length scale even in the as-deposited films. By 800 °C, the LaScO 3 had started to crystallize and formed a ∼5 nm thick Sc-deficient interlayer between it and silicon.

UR - https://www.scopus.com/pages/publications/33747121612

UR - https://www.scopus.com/pages/publications/33747121612#tab=citedBy

U2 - 10.1063/1.2222302

DO - 10.1063/1.2222302

M3 - Article

AN - SCOPUS:33747121612

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 062902

ER -

Thermal stability of amorphous LaScO ₃ films on silicon

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