@inproceedings{99c71ec5452a4178bad8636a3a3c987b,
title = "Thermal stability of MBE-grown Si-doped InGaAs/InAlAs heterostructures",
abstract = "The effects of uncapped rapid thermal annealing in an AsH3 ambient on the thermal stability of InGaAs/InAlAs two dimensional electron gas (2DEG) structures are discussed. It is shown that the rapid thermal annealing results in the formation of a parasitic charge near the back of the InGaAs channel. The annealing does not result in large changes in the heterostructure or the intentional dopant position.",
author = "Tischler, {M. A.} and Parker, {B. D.} and J. DeGelormo and Jackson, {T. N.} and F. Cardone and Goorsky, {M. S.}",
year = "1991",
language = "English (US)",
isbn = "0879426268",
series = "Third Int Conf Indium Phosphide Relat Mater",
publisher = "Publ by IEEE",
pages = "602--605",
booktitle = "Third Int Conf Indium Phosphide Relat Mater",
note = "Third International Conference on Indium Phosphide and Related Materials ; Conference date: 08-04-1991 Through 11-04-1991",
}