Thermal stability of undoped strained Si channel SiGe heterostructures

H. Klauk, T. N. Jackson, S. F. Nelson, J. O. Chu

Research output: Contribution to journalArticlepeer-review

31 Scopus citations


We have investigated the thermal stability of Si/SiGe n-channel heterostructures. To eliminate the complication of dopant diffusion, we have fabricated undoped Si/SiGe heterostructure Hall effect devices. With no modulation doping used in our structures, the electron concentration in the strained Si channel is controlled from a back gate. Our devices show high electron mobility of up to 19500 cm2/Vs at 77 K and are stable with negligible 77 K mobility reduction after anneals at 800°C for 30 min and at 950°C for 3 min. These results conform well with a simulation of the diffusion of Ge into the Si channel.

Original languageEnglish (US)
Pages (from-to)1975-1977
Number of pages3
JournalApplied Physics Letters
Issue number14
StatePublished - 1996

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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