Thermal transformation of hydrogen bonds in a-SiC:H films: Structural and optical properties

Andrey V. Vasin, Sergey P. Kolesnik, Audrey A. Konchits, Vladimir S. Lysenko, Alexey N. Nazarov, Audrey V. Rusavsky, S. Ashok

Research output: Contribution to journalConference articlepeer-review


Hydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited using magnetron sputtering technique. Investigation of the effect of the vacuum annealing temperature on photoluminescence properties and paramagnetic defects, and its correlation with structural transformation of a-SiC:H have been performed. Significantly enhanced light emission efficiency after low-temperature vacuum treatment (450°C) is found due to enhanced passivation of paramagnetic defects associated with carbon-rich chemically disordered structure. Subsequent high-temperature vacuum annealing results in a decrease of luminescent intensity that is associated with increase of carbon related paramagnetic defect states, shown to be the primary nonradiative recombination centres. For the first time silicon-related dangling bonds in a-SiC:H have been detected reliably by electron paramagnetic resonance measurements in annealed samples.

Original languageEnglish (US)
Article numberE9.37
Pages (from-to)527-532
Number of pages6
JournalMaterials Research Society Symposium Proceedings
StatePublished - Dec 1 2005
Event2005 materials Research Society Spring Meeting - San Francisco, CA, United States
Duration: Mar 28 2005Apr 1 2005

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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