TY - GEN
T1 - Thermal transport across AL-(ALXGA1-X)2O3 and AL-GA2O3 interfaces
AU - Shi, Jingjing
AU - Krishnan, Anusha
AU - Bhuiyan, A. F.M.Anhar Uddin
AU - Koh, Yee Rui
AU - Huynh, Kenny
AU - Mauze, Akhil
AU - Mu, Sai
AU - Foley, Brian M.
AU - Ahmad, Habib
AU - Itoh, Takeki
AU - Zhang, Yuewei
AU - Yuan, Chao
AU - Kim, Samuel
AU - Doolittle, W. Alan
AU - van de Walle, Chris
AU - Speck, James S.
AU - Goorsky, Mark
AU - Hopkins, Patrick
AU - Zhao, Hongping
AU - Graham, Samuel
N1 - Publisher Copyright:
Copyright © 2021 by ASME.
PY - 2021
Y1 - 2021
N2 - (AlxGa1-x)2O3 and Ga2O3 are promising wide bandgap semiconductors for application in power electronics and radio frequency devices because of their exceptional electrical transport properties. However, the heat dissipation in these devices will be limited by the ultra-low thermal conductivity of (AlxGa1-x)2O3 and Ga2O3. Previous studies showed that these devices could achieve high power density with double-sided or top-side cooling strategies. Therefore, the thermal transport across metal-(AlxGa1-x)2O3 and metal-Ga2O3 contacts is important, since heat will be conducted through the metal-semiconductor interface as a preferred pathway to extract heat from the devices. In this work, we study the thermal transport across Al-(AlxGa1-x)2O3 and Al-Ga2O3 interfaces with an (010) orientation for the semiconductors. We have applied thermal and material characterization (time-domain thermoreflectance (TDTR) and high-resolution transmission electron microscopy (HRTEM) together with theoretical approaches to understand the interfacial thermal transport at Al-(AlxGa1-x)2O3 and AlGa2O3 contacts. It is found that for different growth methods, the highest TBC at Al-Ga2O3 interface occurs with molecular beam epitaxy (MBE) deposition of the Al on Ga2O3. However, the experimentally measured TBC at E-beam evaporated Al interfaces is much lower than that at the MBE grown Al interfaces. The measured values are also much lower than theoretical predictions, and it is related to the interfacial chemical reactions that occur at the interfaces. The effect of Al composition on interfacial thermal transport at Al/(AlxGa1-x)2O3 interface is also studied. It is found that the TBC at the E-beam evaporated Al/(AlxGa1-x)2O3 interface is very close to that of the E-beam evaporated Al-Ga2O3 interface at different temperatures in the ternary alloy studied.
AB - (AlxGa1-x)2O3 and Ga2O3 are promising wide bandgap semiconductors for application in power electronics and radio frequency devices because of their exceptional electrical transport properties. However, the heat dissipation in these devices will be limited by the ultra-low thermal conductivity of (AlxGa1-x)2O3 and Ga2O3. Previous studies showed that these devices could achieve high power density with double-sided or top-side cooling strategies. Therefore, the thermal transport across metal-(AlxGa1-x)2O3 and metal-Ga2O3 contacts is important, since heat will be conducted through the metal-semiconductor interface as a preferred pathway to extract heat from the devices. In this work, we study the thermal transport across Al-(AlxGa1-x)2O3 and Al-Ga2O3 interfaces with an (010) orientation for the semiconductors. We have applied thermal and material characterization (time-domain thermoreflectance (TDTR) and high-resolution transmission electron microscopy (HRTEM) together with theoretical approaches to understand the interfacial thermal transport at Al-(AlxGa1-x)2O3 and AlGa2O3 contacts. It is found that for different growth methods, the highest TBC at Al-Ga2O3 interface occurs with molecular beam epitaxy (MBE) deposition of the Al on Ga2O3. However, the experimentally measured TBC at E-beam evaporated Al interfaces is much lower than that at the MBE grown Al interfaces. The measured values are also much lower than theoretical predictions, and it is related to the interfacial chemical reactions that occur at the interfaces. The effect of Al composition on interfacial thermal transport at Al/(AlxGa1-x)2O3 interface is also studied. It is found that the TBC at the E-beam evaporated Al/(AlxGa1-x)2O3 interface is very close to that of the E-beam evaporated Al-Ga2O3 interface at different temperatures in the ternary alloy studied.
UR - https://www.scopus.com/pages/publications/85120504016
UR - https://www.scopus.com/inward/citedby.url?scp=85120504016&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:85120504016
T3 - Proceedings of ASME 2021 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2021
BT - Proceedings of ASME 2021 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2021
PB - American Society of Mechanical Engineers
T2 - ASME 2021 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2021
Y2 - 26 October 2021 through 28 October 2021
ER -