Thermally stable tantalum nitride/silicon Schottky barriers

S. Ashok, M. Crookshank, M. Chu, G. Sellers

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Tantalum nitride films deposited by reactive sputtering in an rf magnetron sputtering system have been found to form excellent Schottky barriers on n-type Si with an effective barrier height of 0.74 eV and an ideality factor of <1.1. Following a postdeposition 500 °C anneal, the Au/Ti-W/ TaN/n-Si structures exhibit little degradation of electrical properties when sustained at that temperature. The current-voltage characteristics begin to degrade at 600 °C, and evaluation of the capacitance-voltage data of degraded devices shows a rapid rise in surface donor concentration at anneal temperatures above 600 °C, evidently caused by the penetration of Ta (a deep donor in Si) into Si.

Original languageEnglish (US)
Pages (from-to)1599-1601
Number of pages3
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number3
StatePublished - May 1988

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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