Thermally Stable ZrN/Zr/n-GaN Ohmic Contacts

S. D. Wolter; B. P. Luther; S. E. Mohney; R. F. Karlicek; R. S. Kern

doi:10.1149/1.1390766

Thermally Stable ZrN/Zr/n-GaN Ohmic Contacts

S. D. Wolter, B. P. Luther, S. E. Mohney, R. F. Karlicek, R. S. Kern

Research output: Contribution to journal › Article › peer-review

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Abstract

Thermally stable ZrN(200 nm)/Zr (5 nm)/n-GaN ohmic contacts are reported. Specific contact resistances as low as 2 × 10^-5 Ω cm² are obtained after annealing in Ar at 1100°C for 1 min. Compared to previously reported TiN(200 nm)/Ti (5 nm)/n-GaN contacts, higher annealing temperatures are required to achieve ohmic behavior. This observation is attributed to slower reaction kinetics between Zr and GaN compared to Ti and GaN, as revealed by X-ray photoelectron spectroscopy depth profiles of annealed Zr/n-GaN and Ti/n-GaN contacts. The ZrN/Zr/n-GaN contacts exhibit excellent thermal stability during aging in evacuated quartz tubes at 600°C for 1000 h.

Original language	English (US)
Pages (from-to)	151-153
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	2
Issue number	3
DOIs	https://doi.org/10.1149/1.1390766
State	Published - Mar 1999

All Science Journal Classification (ASJC) codes

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Thermally Stable ZrN/Zr/n-GaN Ohmic Contacts",

abstract = "Thermally stable ZrN(200 nm)/Zr (5 nm)/n-GaN ohmic contacts are reported. Specific contact resistances as low as 2 × 10-5 Ω cm2 are obtained after annealing in Ar at 1100°C for 1 min. Compared to previously reported TiN(200 nm)/Ti (5 nm)/n-GaN contacts, higher annealing temperatures are required to achieve ohmic behavior. This observation is attributed to slower reaction kinetics between Zr and GaN compared to Ti and GaN, as revealed by X-ray photoelectron spectroscopy depth profiles of annealed Zr/n-GaN and Ti/n-GaN contacts. The ZrN/Zr/n-GaN contacts exhibit excellent thermal stability during aging in evacuated quartz tubes at 600°C for 1000 h.",

author = "Wolter, {S. D.} and Luther, {B. P.} and Mohney, {S. E.} and Karlicek, {R. F.} and Kern, {R. S.}",

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language = "English (US)",

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journal = "Electrochemical and Solid-State Letters",

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TY - JOUR

T1 - Thermally Stable ZrN/Zr/n-GaN Ohmic Contacts

AU - Wolter, S. D.

AU - Luther, B. P.

AU - Mohney, S. E.

AU - Karlicek, R. F.

AU - Kern, R. S.

PY - 1999/3

Y1 - 1999/3

N2 - Thermally stable ZrN(200 nm)/Zr (5 nm)/n-GaN ohmic contacts are reported. Specific contact resistances as low as 2 × 10-5 Ω cm2 are obtained after annealing in Ar at 1100°C for 1 min. Compared to previously reported TiN(200 nm)/Ti (5 nm)/n-GaN contacts, higher annealing temperatures are required to achieve ohmic behavior. This observation is attributed to slower reaction kinetics between Zr and GaN compared to Ti and GaN, as revealed by X-ray photoelectron spectroscopy depth profiles of annealed Zr/n-GaN and Ti/n-GaN contacts. The ZrN/Zr/n-GaN contacts exhibit excellent thermal stability during aging in evacuated quartz tubes at 600°C for 1000 h.

AB - Thermally stable ZrN(200 nm)/Zr (5 nm)/n-GaN ohmic contacts are reported. Specific contact resistances as low as 2 × 10-5 Ω cm2 are obtained after annealing in Ar at 1100°C for 1 min. Compared to previously reported TiN(200 nm)/Ti (5 nm)/n-GaN contacts, higher annealing temperatures are required to achieve ohmic behavior. This observation is attributed to slower reaction kinetics between Zr and GaN compared to Ti and GaN, as revealed by X-ray photoelectron spectroscopy depth profiles of annealed Zr/n-GaN and Ti/n-GaN contacts. The ZrN/Zr/n-GaN contacts exhibit excellent thermal stability during aging in evacuated quartz tubes at 600°C for 1000 h.

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ER -

Thermally Stable ZrN/Zr/n-GaN Ohmic Contacts

Abstract

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