Thermistor having doped and undoped layers of material

Jeffery B. Fortin

Thermistor having doped and undoped layers of material

Jeffery B. Fortin (Inventor)

Office of the Senior Vice President for Research

Research output: Patent

Abstract

According to some embodiments, a first layer of doped material may be provided to form a resistor. A second layer of undoped material may then be formed on the first layer. The first layer might comprise, for example, a layer of doped silicon carbide while the second layer comprises a layer of undoped silicon carbide. The resistance of the resistor may then be measured to determine a temperature.

Original language	English (US)
Patent number	US7880580B2
State	Published - Feb 1 2011

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title = "Thermistor having doped and undoped layers of material",

abstract = "According to some embodiments, a first layer of doped material may be provided to form a resistor. A second layer of undoped material may then be formed on the first layer. The first layer might comprise, for example, a layer of doped silicon carbide while the second layer comprises a layer of undoped silicon carbide. The resistance of the resistor may then be measured to determine a temperature.",

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N2 - According to some embodiments, a first layer of doped material may be provided to form a resistor. A second layer of undoped material may then be formed on the first layer. The first layer might comprise, for example, a layer of doped silicon carbide while the second layer comprises a layer of undoped silicon carbide. The resistance of the resistor may then be measured to determine a temperature.

AB - According to some embodiments, a first layer of doped material may be provided to form a resistor. A second layer of undoped material may then be formed on the first layer. The first layer might comprise, for example, a layer of doped silicon carbide while the second layer comprises a layer of undoped silicon carbide. The resistance of the resistor may then be measured to determine a temperature.

M3 - Patent

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ER -

Thermistor having doped and undoped layers of material

Abstract

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