Thermodynamic considerations in the rationalization of solid-state amorphization between metals and III-V semiconductors

Y. A. Chang; F. Y. Shiau; S. L. Chen; S. E. Mohney

Thermodynamic considerations in the rationalization of solid-state amorphization between metals and III-V semiconductors

Y. A. Chang, F. Y. Shiau, S. L. Chen, S. E. Mohney

Research output: Contribution to conference › Paper › peer-review

Abstract

The concept of the T₀ curve is introduced as a feature of the phase diagram. This curve is used to explain solubility extension and the rapid quenching of an amorphous phase from the melt in model binary systems. The thermodynamics of solid-state amorphization are similar to those of solubility extension and the formation of an amorphous phase from the melt. This phenomenon occurs in Co/GaAs couples and can be rationalized in a similar manner. An approximate thermodynamic description for the GaAs-Co join and the fact that Co is a rapid diffuser in the lattice of GaAs are used. This analysis can be applied to any metal/III-V semiconductor system provided thermodynamic information is available.

Original language	English (US)
Pages	187-198
Number of pages	12
State	Published - 1997
Event	Proceedings of the 1997 TMS Annual Meeting - Orlando, FL, USA Duration: Feb 9 1997 → Feb 13 1997

Other

Other	Proceedings of the 1997 TMS Annual Meeting
City	Orlando, FL, USA
Period	2/9/97 → 2/13/97

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Mechanics of Materials
Metals and Alloys

Cite this

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title = "Thermodynamic considerations in the rationalization of solid-state amorphization between metals and III-V semiconductors",

abstract = "The concept of the T0 curve is introduced as a feature of the phase diagram. This curve is used to explain solubility extension and the rapid quenching of an amorphous phase from the melt in model binary systems. The thermodynamics of solid-state amorphization are similar to those of solubility extension and the formation of an amorphous phase from the melt. This phenomenon occurs in Co/GaAs couples and can be rationalized in a similar manner. An approximate thermodynamic description for the GaAs-Co join and the fact that Co is a rapid diffuser in the lattice of GaAs are used. This analysis can be applied to any metal/III-V semiconductor system provided thermodynamic information is available.",

author = "Chang, {Y. A.} and Shiau, {F. Y.} and Chen, {S. L.} and Mohney, {S. E.}",

year = "1997",

language = "English (US)",

pages = "187--198",

}

TY - CONF

T1 - Thermodynamic considerations in the rationalization of solid-state amorphization between metals and III-V semiconductors

AU - Chang, Y. A.

AU - Shiau, F. Y.

AU - Chen, S. L.

AU - Mohney, S. E.

PY - 1997

Y1 - 1997

N2 - The concept of the T0 curve is introduced as a feature of the phase diagram. This curve is used to explain solubility extension and the rapid quenching of an amorphous phase from the melt in model binary systems. The thermodynamics of solid-state amorphization are similar to those of solubility extension and the formation of an amorphous phase from the melt. This phenomenon occurs in Co/GaAs couples and can be rationalized in a similar manner. An approximate thermodynamic description for the GaAs-Co join and the fact that Co is a rapid diffuser in the lattice of GaAs are used. This analysis can be applied to any metal/III-V semiconductor system provided thermodynamic information is available.

AB - The concept of the T0 curve is introduced as a feature of the phase diagram. This curve is used to explain solubility extension and the rapid quenching of an amorphous phase from the melt in model binary systems. The thermodynamics of solid-state amorphization are similar to those of solubility extension and the formation of an amorphous phase from the melt. This phenomenon occurs in Co/GaAs couples and can be rationalized in a similar manner. An approximate thermodynamic description for the GaAs-Co join and the fact that Co is a rapid diffuser in the lattice of GaAs are used. This analysis can be applied to any metal/III-V semiconductor system provided thermodynamic information is available.

UR - http://www.scopus.com/inward/record.url?scp=0031367832&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031367832&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0031367832

SP - 187

EP - 198

T2 - Proceedings of the 1997 TMS Annual Meeting

Y2 - 9 February 1997 through 13 February 1997

ER -

Thermodynamic considerations in the rationalization of solid-state amorphization between metals and III-V semiconductors

Abstract

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All Science Journal Classification (ASJC) codes

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