Thermometry of AlGaN/GaN HEMTs using multispectral raman features

Sukwon Choi, Eric R. Heller, Donald Dorsey, Ramakrishna Vetury, Samuel Graham

Research output: Contribution to journalArticlepeer-review

86 Scopus citations

Abstract

In this paper, we utilize micro-Raman spectroscopy to measure temperature and stress in state-of-the-art AlGaN/GaN HEMTs. A rigorous discussion on the physical accuracy, precision, and precautions for diverse Raman thermometry methods is developed. Thermometry techniques utilizing shifts in a single Raman Stokes peak position underpredict the channel temperature due to induction of operational thermoelastic stress in operating devices. Utilizing the change in phonon linewidth by employing a proper reference condition gives true temperature results. Making use of frequency shifts in both the E 2(high) and A1(LO) phonon modes offers accurate and time-efficient means to determine the state of temperature and thermal stress in operating AlGaN/GaN HEMTs presuming that linear relations between phonon frequencies and temperature/stress are well determined. Useful applications of this method such as monitoring stress in GaN wafers between fabrication steps and Raman thermography on AlGaN/GaN HEMTs are demonstrated.

Original languageEnglish (US)
Article number6507260
Pages (from-to)1898-1904
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume60
Issue number6
DOIs
StatePublished - 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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