TY - GEN
T1 - THERMOPHYSICAL PROPERTY MEASUREMENT OF GAN-ON-ALN WAFERS FOR NEXT-GENERATION RF DEVICE TECHNOLOGIES
AU - Walwil, Husam
AU - Shoemaker, Daniel C.
AU - Song, Yiwen
AU - Kang, Kyuhwe
AU - McIlwaine, Nathaniel S.
AU - Schuette, Michael L.
AU - Tweedie, James S.
AU - Sheppard, Scott T.
AU - Maria, Jon Paul
AU - Choi, Sukwon
N1 - Publisher Copyright:
Copyright © 2024 by ASME.
PY - 2024
Y1 - 2024
N2 - Gallium nitride (GaN) high electron mobility transistors (HEMTs) play a crucial role in modern radio frequency (RF) power amplifiers. However, the performance and reliability of GaN HEMTs are negatively impacted by device self-heating. Hence, it's imperative to thoroughly characterize the entire thermal resistance network within the material stack to pinpoint any bottleneck resistance components. In this study, a multi-frequency, multi-spot time-domain thermoreflectance measurement approach was used to measure the thermal resistance associated with the constituent layers and interfaces within a GaN-on-AlN wafer stack. The thermal conductivity of the GaN layer and the AlN substrate in both through-plane and in-plane directions were determined. The GaN/AlN interface exhibits a high thermal boundary conductance (TBC) of 500 MW/m2·K. This surpasses previously reported TBC values across GaN/SiC and GaN/diamond interfaces, highlighting the potential for improved thermal management of GaN HEMTs.
AB - Gallium nitride (GaN) high electron mobility transistors (HEMTs) play a crucial role in modern radio frequency (RF) power amplifiers. However, the performance and reliability of GaN HEMTs are negatively impacted by device self-heating. Hence, it's imperative to thoroughly characterize the entire thermal resistance network within the material stack to pinpoint any bottleneck resistance components. In this study, a multi-frequency, multi-spot time-domain thermoreflectance measurement approach was used to measure the thermal resistance associated with the constituent layers and interfaces within a GaN-on-AlN wafer stack. The thermal conductivity of the GaN layer and the AlN substrate in both through-plane and in-plane directions were determined. The GaN/AlN interface exhibits a high thermal boundary conductance (TBC) of 500 MW/m2·K. This surpasses previously reported TBC values across GaN/SiC and GaN/diamond interfaces, highlighting the potential for improved thermal management of GaN HEMTs.
UR - http://www.scopus.com/inward/record.url?scp=85210841525&partnerID=8YFLogxK
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U2 - 10.1115/IPACK2024-140195
DO - 10.1115/IPACK2024-140195
M3 - Conference contribution
AN - SCOPUS:85210841525
T3 - Proceedings of ASME 2024 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2024
BT - Proceedings of ASME 2024 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2024
PB - American Society of Mechanical Engineers
T2 - ASME 2024 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2024
Y2 - 8 October 2024 through 10 October 2024
ER -