Thin channel a-Si:H thin film transistors

D. B. Thomasson; T. N. Jackson

doi:10.1109/drc.1996.546318

Thin channel a-Si:H thin film transistors

Research output: Contribution to conference › Paper › peer-review

Abstract

This paper investigates the performance of ultra-thin TFTs by modeling devices of varying thickness and have fabricates ultra-thin a-Si:H TFTs suitable for use in AMLCDs. It is shown that the ultra-thin active layer TFT structure can provide improved throughput, simplified processing, higher channel conductance, and current saturation characteristics equal to or better than current devices. In addition, fabrication of thin channel layer devices with doped contact regions is also possible and is directly compatible with commonly used a-Si:H TFT AMLCD processing.

Original language	English (US)
Pages	70-71
Number of pages	2
DOIs	https://doi.org/10.1109/drc.1996.546318
State	Published - 1996
Event	Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, USA Duration: Jun 24 1996 → Jun 26 1996

Other

Other	Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC
City	Santa Barbara, CA, USA
Period	6/24/96 → 6/26/96

All Science Journal Classification (ASJC) codes

General Engineering

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10.1109/drc.1996.546318

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title = "Thin channel a-Si:H thin film transistors",

abstract = "This paper investigates the performance of ultra-thin TFTs by modeling devices of varying thickness and have fabricates ultra-thin a-Si:H TFTs suitable for use in AMLCDs. It is shown that the ultra-thin active layer TFT structure can provide improved throughput, simplified processing, higher channel conductance, and current saturation characteristics equal to or better than current devices. In addition, fabrication of thin channel layer devices with doped contact regions is also possible and is directly compatible with commonly used a-Si:H TFT AMLCD processing.",

author = "Thomasson, {D. B.} and Jackson, {T. N.}",

year = "1996",

doi = "10.1109/drc.1996.546318",

language = "English (US)",

pages = "70--71",

note = "Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC ; Conference date: 24-06-1996 Through 26-06-1996",

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AU - Thomasson, D. B.

AU - Jackson, T. N.

PY - 1996

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AB - This paper investigates the performance of ultra-thin TFTs by modeling devices of varying thickness and have fabricates ultra-thin a-Si:H TFTs suitable for use in AMLCDs. It is shown that the ultra-thin active layer TFT structure can provide improved throughput, simplified processing, higher channel conductance, and current saturation characteristics equal to or better than current devices. In addition, fabrication of thin channel layer devices with doped contact regions is also possible and is directly compatible with commonly used a-Si:H TFT AMLCD processing.

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DO - 10.1109/drc.1996.546318

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T2 - Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC

Y2 - 24 June 1996 through 26 June 1996

ER -

Thin channel a-Si:H thin film transistors

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