TY - GEN
T1 - Thin film capacitors fabricated by chemical solution deposition
AU - Ko, Song Won
AU - Dechakupt, Tanawadee
AU - Yang, Gaiying
AU - Randall, Clive A.
AU - Trolier-McKinstry, Susan E.
AU - Randall, Michael
AU - Pinceloup, Pascal
AU - Tajuddin, Azizuddin
PY - 2008/12/1
Y1 - 2008/12/1
N2 - It was found that the dielectric properties of BaTiO3 films on Ni foil substrates varied with oxygen partial pressure and composition. 200 nm thick Mn doped BaTiO3 films annealed at 1000°C in 10 -12 atm po2 showed a dielectric constant of 950 and low loss up to 250kV/cm bias electric field. Mn doping may trap electrons introduced by oxygen vacancies formed due to low oxygen partial pressures during heat-treatment. High dielectric constant values were achieved for 200nm thick films, so scaling of the dielectric to around 100nm should be possible. As the oxygen partial pressure during firing drops, the dielectric loss of Mn doped BaTiO3 film suddenly increased at low electric field. Carbon residue as well as oxygen partial pressure and composition can affect the dielectric properties. Removal of carbon residue was retarded from 750°C in air to 1000°C in nitrogen ambients. Also, residual carbon was found after 1000°C annealing in reducing ambient by electron energy loss spectroscopy (TEM-EELS) analysis. This residual carbon led to local reductions in the oxygen partial pressure during firing, reduced titanium ions, and to the presence of a Ni-Ba interfacial alloy layer on the surface of the Ni foils.
AB - It was found that the dielectric properties of BaTiO3 films on Ni foil substrates varied with oxygen partial pressure and composition. 200 nm thick Mn doped BaTiO3 films annealed at 1000°C in 10 -12 atm po2 showed a dielectric constant of 950 and low loss up to 250kV/cm bias electric field. Mn doping may trap electrons introduced by oxygen vacancies formed due to low oxygen partial pressures during heat-treatment. High dielectric constant values were achieved for 200nm thick films, so scaling of the dielectric to around 100nm should be possible. As the oxygen partial pressure during firing drops, the dielectric loss of Mn doped BaTiO3 film suddenly increased at low electric field. Carbon residue as well as oxygen partial pressure and composition can affect the dielectric properties. Removal of carbon residue was retarded from 750°C in air to 1000°C in nitrogen ambients. Also, residual carbon was found after 1000°C annealing in reducing ambient by electron energy loss spectroscopy (TEM-EELS) analysis. This residual carbon led to local reductions in the oxygen partial pressure during firing, reduced titanium ions, and to the presence of a Ni-Ba interfacial alloy layer on the surface of the Ni foils.
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U2 - 10.1109/ISAF.2008.4693855
DO - 10.1109/ISAF.2008.4693855
M3 - Conference contribution
AN - SCOPUS:58149518412
SN - 1424427444
SN - 9781424427444
T3 - IEEE International Symposium on Applications of Ferroelectrics
BT - 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
T2 - 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
Y2 - 23 February 2008 through 28 February 2008
ER -